Abstract:As fabrication technology scales towards smaller transistor sizes and lower critical charge, single-event radiation effects are more likely to cause errant behavior in multiple, physically adjacent devices in modern integrated circuits (ICs), and with higher operating frequencies, this risk increasingly impacts design logic over memory as well. In order to increase future system reliability, circuit designers need greater awareness of multiple-transient charge-sharing effects during the early stages of their design flow with standard cell placement and routing. To measure the propagation and observability of multiple transients from single radiation events, this work uses several intra-pipeline combinational logic circuits at the 32nm technology node, investigates several different standard cell placements of each design, and analyzes those placements with a novel, physically realistic transient injection and simulation method. It is shown that (1) this simulation methodology, informed by experimental data, provides an increased realism over other works in traditional fault injection fields, (2) different placements of the same circuit where standard cells are grouped by logical hierarchy can result in different reliability behavior and benefits especially useful within the area of approximate computing, and (3) improved reliability through charge-sharing transient mitigation can be gained with no area penalty and minimal speed and power penalties by adjusting the placement of standard cells.

Single Event Effect Detection and Simulation Analysis for an ASIC

The single-event effect evaluation technology for nano integrated circuits

Design and Verification of Universal Evaluation System for Single Event Effect Sensitivity Measurement in Very-Large-scale Integrated Circuits

Measurement of Single Event Effect cross section induced by monoenergetic protons on a 130 nm ASIC

A Single Event Effect Simulation Method for RISC-V Processor

Single Event Effect Characterization of High Speed Serial JESD204B Data Receiver

Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip

Single Event Effect in ABC ASICs for ITk Strip Upgrade

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Design and Simulation of an Application Specific IC for Intelligent Measurement

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

A Fully Automated Large-Scale Addressable Test Chip Design with High Reliability

Neutron Irradiation Testing and Monte Carlo Simulation of a Xilinx Zynq-7000 System on Chip

Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains under Pulsed Laser and Heavy-Ion Irradiation

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Measurement and evaluation of the Single Event Effects of high-performance SerDes circuits

Single-Event Multiple-Transient Characterization and Mitigation via Alternative Standard Cell Placement Methods

Experimental Study of Transient Dose Rate Effect on System-in-Package SZ0501

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Comparison of Single Event Effect and Space Electrostatic Discharge Effect on FPGA Signal Transmission

A Fast Simulation Method for Evaluating the Single-Event Effect in Aerospace Integrated Circuits