Abstract:Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

Dynamic ON-Resistance Characterization of GaN HEMT Under Soft-Switching Condition

Dynamic On-state Resistance Test and Evaluation of GaN Power Devices under Hard and Soft Switching Conditions by Double and Multiple Pulses

Dynamic On-state Resistance Evaluation of GaN Devices under Hard and Soft Switching Conditions

Dynamic On-Resistance Characterization of GaN Power HEMTs under Forward/Reverse Conduction Using Multigroup Double Pulse Test

Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

Investigation of Temperature-Dependent Dynamic <i>R</i><sub>ON</sub> of GaN HEMT with Hybrid-Drain under Hard and Soft Switching

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

Temperature‐dependent Dynamic R DS,ON under Different Operating Conditions in Enhancement‐mode GaN HEMTs

Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Reverse Conduction Induced Dynamic $\mathrm{R}_{\text{on}}$ Effect in GaN HEMT with p-GaN Gate

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage P-Gan Gate Power HEMTs

Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

Dynamic Gate Breakdown of P-Gate GaN HEMTs in Inductive Power Switching

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices

Temperature-Dependent Dynamic Ron of GaN E-HEMTs: the Impact of P-Gan Drain

Switching Transition Modeling of eGaN HEMT in Power Converters