Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

Failure Analysis and Reliability Improvement of the Corner Region of Variation Lateral Doping Termination

Optimal Impurity Distribution Model and Experimental Verification of Variation of Lateral Doping Termination

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Post-fabrication measurement-driven oxide breakdown reliability prediction and management.

Design and experimental verification of a novel high-reliability variation of lateral doping (VLD) termination

Dv/dt Induced Failure and Improvement of Power Superjunction MOSFET

Linearly Graded Doping Drift Region: a Novel Lateral Voltage-Sustaining Layer Used for Improvement of RESURF LDMOS Transistor Performances

Field Plate-Adaptive Doping: A Novel Surface Electric Field Optimization Technique for SOI LDMOS With Gate Field Plate

3-D analytical model of the high-voltage interconnection effect for SOI LDMOS

Investigation of Breakdown Voltage Degradation in Low-Voltage Narrow Gate Trench MOSFET by Edge Termination Optimization

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Analysis and Mitigation of Single-Event Gate Rupture in VDMOS with Termination Structure

Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

A Variation Laterl Doping Layer and Lightly Doped Region Compensated Superjunction LDMOS

Failure Analysis And Improvement Of The Body Diode In Superjunction Power Mosfet

Optimization of Reverse Recovery Characteristics Based on Termination Structure for 700V Super-Junction VDMOS

Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal–Oxide–Semiconductor Transistors Using High-k Dielectric

Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS Transistor

A Lateral Power P-Channel Trench MOSFET Improved by Variation Vertical Doping

Failure Analysis of the VDMOS Device with Vsd and Rds (on) Exceeded Limit Based on Reliability Physics

Design and Simulation on Improving the Reliability of Gate Oxide in SiC CDMOSFET