Abstract:It is widely recognized that recovery during measurement delay seriously misleads the BTI phenomena. We have developed a modified Charge Pumping (MCP) method to measure the interface trap generation under stress with negligible recovery during measurement delay. The method simply extends the inversion level Vinv of the CP pulse to the stress voltage and keeps the duty cycle of Vinv as large as possible, therefore the stress is almost "on" during measurement. For the first time, we developed a diagram representation of CP process and used to the physical analysis for the contribution and exclusion of slow oxide charge contribution in the CP current of this MCP method. Using this MCP method and the fast pulsed Id-Vg method (FPM) we developed in the past, we systematically investigate and compare the NBTI degradation of p-MOSFETs with thermal (TNO) and plasma (PNO) nitrided SiON gate dielectrics with the same nitrogen surface concentration. We also systematically measure the interface trap degradations in four configurations of NBTI and PBTI stresses for both n-MOSFETs and p-MOSFETs. The following results are achieved: (1) The oxide charge induced degradation in TNO SiON devices is several times larger than those in PNO devices under the same stress condition, due to the larger charge moment in the gate dielectrics of the TNO devices. (2)

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Evidence on p-MOSFET recovery characteristics under NBT stress

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