Abstract:This paper presents work on InAs/GaSb superlattice structural property studies. The superlattice materials were grown by molecular beam epitaxy and measured by high resolution x-ray diffraction, and measured x-ray rocking curves were fitted to the simulated ones in order to fully analyze the superlattice structures. A four-layer model including an InAs layer, a GaSb layer and two interface layers was used for simulation. The results show that the two interface layers are ternary compounds of InSbAs, which have, respectively, an Sb composition of 0.99 at the InAs-on-GaSb interfaces and an Sb composition of 0.01 at the GaSb-on-InAs interfaces. This is the first article, to our knowledge, on the detailed analysis of the InAs/GaSb superlattice interface structures. The experiments also demonstrate that the As flux during the epitaxy growth affects the interface layer InSbAs compositions and hence the lattice mismatch between the superlattices and the substrates. With an As beam equivalent pressure change from 1 × 10−5 to 3 × 10−6 Torr, the lattice mismatch decreases from 3.2 × 10−3 to 5 × 10−4. Measurements on and analysis of Bragg peak broadening under different diffraction geometries show that the broadening depends on both the superlattice period and the lattice mismatch.

Inplane X-Ray-Scattering of Epitaxial Structures

Determination of Three-Dimensional Interfacial Strain — A Novel Method of Probing Interface Structure with X-ray Bragg-surface Diffraction

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Realizing In-Plane Surface Diffraction by X-Ray Multiple-Beam Diffraction with Large Incidence Angle

Measuring Interface Strains At The Atomic Resolution In Depth Using X-Ray Bragg-Surface Diffraction

Unit cell determination of epitaxial thin films based on reciprocal space vectors by high-resolution X-ray diffractometry

Application Status of Phase Field Crystal Model in the Heteroepitaxy

A Binary Phase Field Crystal Study for Liquid Phase Heteroepitaxial Growth

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Phase-field crystal modeling of shape transition of strained islands in heteroepitaxy

Monitoring growth with X-ray diffraction

Simultaneous Bragg Diffraction of X-rays from Liquid-Phase Epitaxial Thin Films

Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

Determination of the interface structural morphology from grazing-incidence X-ray diffraction data using dynamical theory

In-plane Epitaxy-Strain-tuning Intralayer and Interlayer Magnetic Coupling in CrSe2 and CrTe2 Monolayers and Bilayers

In-plane epitaxy strain tuning intralayer and interlayer magnetic couplings in CrSe2 and CrTe2 mono- and bi-layers

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Direct measurement of internal strains in YBa2Cu3O7-x thin films on SrTiO3 substrate

High Resolution X-Ray Diffraction Study Of Bragg Peak Width In Strained Ingaas/Inalas/Inp Heterostructures

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

The Interface Structure of InAs/GaInSb Strained-Layer Superlattice