Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

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Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

Temperature-dependent Photoluminescence of the InAs-based and GaSb-based Type-Ii Superlattices

Anomalous Temperature Dependence of Photoluminescence in Gainnas/Gaas Multiple Quantum Wells

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Temperature Dependence Of The Fundamental Band Gap Of Inn

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

The temperature dependence of optical properties of InGaN alloys

Photoreflectance Study Of N- And Sb-Related Modifications Of The Energy Gap And Spin-Orbit Splitting In Innassb Alloys

Photoluminescence of N‐inn with Low Electron Concentrations

Temperature Dependence Of The Optical Properties Of Alinn

Temperature Dependence of Optical Transitions of One Dimensional InGaAs/GaAs Quantum Structures

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Anomalous Temperature-Dependent Photoluminescence Peak Energy in InAlN Alloys

Temperature-Dependent Optical Properties of Wurtzite Inn

Investigation of Photoluminescence and Photoreflectance in MBE-Grown GaInNAs/GaAs QWs

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

Acceptor States in the Photoluminescence Spectra of N-Inn

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well