Abstract:Spacer technology has been developed to fabricate nano-structures for NEMS application. It provides a parallel nano-fabrication method with double or quadplex device density at a certain lithography node. By controlling the deposited film thickness, the feature size of the SiO2 spacer hard mask is reduced down to 35 nm. After the spacer pattern is transferred to Si, a precise thermal oxidation is performed to improve the profile and reduce the plasma damage. Finally, sublimation or HF vapor phase etching is introduced to release the nano-structures according to different structure dimensions. As a result, with better surface morphology, suspended Si nano-beams with a width of 20 nm are obtained. Actuated by mechanical vibration and electrostatic forces, vibrations of the obtained cantilever beams and fixed-fixed beams are observed in SEM. In addition, a metallic nano-nozzle with a diameter of 140 nm is established by electroless plating around the suspended Si nano-beam served as a mold. As a development of the spacer technology, nano-needle array is demonstrated at the cross points of crossed SiO2 spacers by anisotropic etching. The diameters of the hybridized nano-needles are 300 nm so far and can be further reduced by smaller spacer dimension.

Fabrication And Characterization Of Si Nanowire Scaling To 20 Nm By Spacer Technology

Fabrication of Nano-Electromechanical Structures Down to 20 nm by Spacer Technology

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Silicon Nano-Wire Fabricated by Boe Silicon Etching

Fabrication of Conducting Si Nanowire Arrays

Fabrication of High-Compact Nanowires Using Alternating Photoresist Ashing and Spacer Technology

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

OS1503 Development of Highly Ordered Silicon Nanowire Array

Dispersion, Refinement, and Manipulation of Single Silicon Nanowires

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Tiny silicon nano-wires synthesis on silicon wafers

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Fabrication of Silicon Nanowire Arrays with Controlled Diameter, Length, and Density

Top-down fabrication of sub-30 nm monocrystalline silicon nanowires using conventional microfabrication

Engineering Island-Chain Silicon Nanowires Via a Droplet Mediated Plateau-Rayleigh Transformation

A facile nanowire fabrication approach based on edge lithography

Fabrication of Straight Silicon Nanowires and Their Conductive Properties

Fabrication and Characterization of Ge Nanodot/si Nanowire Composite Structures

Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation

The fabrication of large-scale sub-10-nm core-shell silicon nanowire arrays