Abstract:The flexibility, low weight, and affordability of organic thin‐film transistors (OTFTs) have drawn attention in a variety of applications. A novel conductance–voltage technique for accurate threshold voltage extraction in OTFTs is presented in this article. This nondestructive method can be used on both p‐type and n‐type devices and provides a thorough examination of important parameters along with a variety of useful insights. Interesting effects of traps, doping, bandgap, work function, and characteristic temperature on threshold voltage are revealed by simulations on pentacene and amorphous indium‐gallium‐zinc‐oxide‐based transistors. In the comparative studies, the method's accuracy in comparison to traditional methods is highlighted, proving its worth as an effective tool for device design and optimization in the future. Threshold voltage is an essential component for a transistor to operate properly. In this work, an alternate technique for obtaining the threshold voltage, which is referred to as the conductance–voltage method, is suggested. In this technique, the threshold voltage is estimated by measuring the change in drain current with an applied gate voltage when the device transits from the weak accumulation to the strong accumulation mode of operation. The 2D simulations are then used to apply this strategy to pentacene‐based and amorphous indium‐gallium‐zinc‐oxide‐based thin‐film transistors (TFTs) in their linear region of operation. These seem promising, and the technique offers a useful tool for enhancing the functionality of complementary organic/oxide TFTs in the future.

Contact Effects On The Threshold Voltage Extraction In Organic Thin-Film Transistors

Threshold Voltage Extraction in the Saturation Regime Insensitive to the Contact Properties for Organic Thin-Film Transistors

Extracting contact effects in organic field-effect transistors

Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors

Structure-Dependent Contact Barrier Effects in Bottom-Contact Organic Thin-Film Transistors

Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

Modulating Contact Properties by Molecular Layers in Organic Thin‐film Transistors

Extraction of Contact Resistance and DC Modeling in Metal Oxide TFTs

Solution Processed High Performance Short Channel Organic Thin-Film Transistors with Excellent Uniformity and Ultra-low Contact Resistance for Logic and Display

Impact of Gate Coupling and Misalignment on Performance of Double-gate Organic Thin Film Transistors

Bottom-Contact Organic Field-Effect Transistors Having Low-Dielectric Layer Under Source And Drain Electrodes

Onset Voltage Shift in the Organic Thin-Film Transistor with an Atomic-Layer-deposited Charge-Injection Interlayer

Abnormal Back Channel Leakage under Large Drain Voltage in Short Channel Organic Thin-Film Transistors

Effect of source–drain contact and channel length on the performance of vertical thin-film transistors

Organic Thin-Film Transistors In Sandwich Configuration

Modification of Indium Tin Oxide Electrodes by Fluorinated Silanes for Transparent Organic Thin-Film Transistors

Modified transmission-line method for evaluation of the contact resistance: Effect of channel-length-dependent threshold voltage

Influence of Source and Drain Contacts on the Properties of the Indium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Modified Transmission Line Model for Bottom-Contact Organic Transistors

Modification of Gold Source and Drain Electrodes by Self-Assembled Monolayer in Staggered N- and P-Channel Organic Thin Film Transistors

Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors