Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors

Vikash Kaphle,Shiyi Liu,Akram Al‐Shadeedi,Chang‐Min Keum,Björn Lüssem,Akram Al-Shadeedi,Chang-Min Keum
DOI: https://doi.org/10.1002/adma.201602125
IF: 29.4
2016-08-11
Advanced Materials
Abstract:Injection at the source contact critically determines the behavior of depletion-type organic electrochemical transistors (OETs). The contact resistance of OETs increases exponentially with the gate voltage and strongly influences the modulation of the drain current by the gate voltage over a wide voltage range. A modified standard model accounting contact resistance can explain the particular shape of the transconductance.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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