Abstract:A high‐efficiency "interface collaborative strategy", comprising of transferring "doped" electrodes and utilizing polymer modified layer on SiO2 with suitable surface polarity (γsp) is demonstrated that have great advantages in constructing ideal single‐crystal OFETs attributed to tunable injection contact without direct chemical bonding and weakened charge scattering effect, providing some useful guidance to correctly evaluate organic semiconductor materials. The key roles of electrode/semiconductor and semiconductor/dielectric interfaces play in the ideality of organic field‐effect transistors (OFETs) by traditional device preparation technologies are not yet fully understood, which severely limits progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. Herein, at a quantitative level, the origin of nonideal current–voltage (I–V) curves and possibly overestimated mobility in single‐crystal OFETs is revealed, including contact resistance (Rc), charge trapping, and scattering at interfaces of devices. Impressively, an efficient interface collaborative strategy, which consists of transferred "doped" electrodes with tunable contact "doping" localized regions at the source‐drain contacts and polymer‐modified SiO2 with suitable surface polarity (γsp) is further demonstrated that have great advantages in the construction of ideal high mobility devices. Also, an interesting double‐edged sword effect of γsp of dielectric on the ideality of OFETs is observed. The dielectric with a lower γsp can result in higher mobility, while too low γsp would degrade the device ideality due to significant effect of charge scattering. The findings not only provide new perspectives and strategies to construct ideal OFETs but also offer useful guidance to correctly evaluate organic semiconductor materials.

Critical impact of gate dielectric interfaces on the contact resistance of high-performance organic field-effect transistors

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Effect of contact resistance in organic field‐effect transistors

The Effect of Organic Gate-dielectric on Field-effect Transistor Characteristics

Comparing the Gate Dependence of Contact Resistance and Channel Resistance in Organic Field-Effect Transistors for Understanding the Mobility Overestimation Issue

Correlation between dielectric/organic interface properties and key electrical parameters in PPV-based OFETs.

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

Semiconductor/dielectric Interface in Organic Field-Effect Transistors: Charge Transport, Interfacial Effects, and Perspectives with 2D Molecular Crystals

Role of Schottky Barrier and Access Resistance in Organic Field-Effect Transistors

Influence of contact resistance on the performance of high-mobility top-gate organic transistors with short channel lengths

Impact of Gate Structure on the Electrophysiology Detection Behaviors for SOI Ion-Sensitive FETs

Gate Bias Stress in Pentacene Field-Effect-Transistors: Charge Trapping in the Dielectric or Semiconductor

Charge Distribution and Contact Resistance Model for Coplanar Organic Field-Effect Transistors

A method for direct contact resistance evaluation in low voltage coplanar organic field-effect transistors

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

The Importance of Contact Resistance in High-Mobility Organic Field-Effect Transistors Studied by Scanning Kelvin Probe Microscopy

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

Interface Collaborative Strategy for High Mobility Organic Single‐Crystal Field‐Effect Transistors with Ideal Current–Voltage Curves

Individual and synergetic charge transport properties at the solid and electrolyte interfaces of a single ultrathin single crystal of organic semiconductors