Abstract:Charge carrier mobility is one of the important parameters to measure to compare the behavior of different organic transistors. A high carrier mobility is essential for the organic transistors to operate at a high frequency. Recently, there have been discussions on the mobility overestimation due to gate bias dependent Schottky contacts which lead to severe nonlinearities in the current voltage characteristics, i.e., the double-slope feature. In addition, an accurate evaluation of the carrier mobility from the transfer curves requires accurate parameters such as channel dimensions or dielectric capacitance. Many of the organic field-effect transistors (OFETs) reported in the literature employ unpatterned semiconductor active layers or gate/gate dielectrics where the effective channel dimensions significantly deviate from the values defined by the source drain electrodes due to the fringe effect. To reveal the importance of the fringe effect on the mobility evaluation, here we perform a systematic investigation of OFETs with vacuum-deposited active layers in relation to the fringe effect, followed by the same analysis of solution-processed OFETs with tunable crystal morphology. By continuously narrowing down the active layer toward the actual channel region defined by the source drain electrodes, we show that the carrier mobilities are 110% and 60% overestimated in the vacuum-deposited and solution-processed devices, respectively, even with ideal linearity in the transfer curves. Herein, we suggest a model to evaluate the degree of mobility overestimation in these two families of OFETs and provide the guidelines for the design of the device geometry and channel dimensions to minimize mobility overestimation induced by the fringe effect. In our solution-processed OFETs, we conclude that a large channel width to length ratio over 20 is essential to alleviate the fringe current outside the channel, while a channel ratio greater than 40 is needed for the OFETs with vacuum-deposited semiconductor layers.

Influence of contact resistance on the performance of high-mobility top-gate organic transistors with short channel lengths

Comparing the Gate Dependence of Contact Resistance and Channel Resistance in Organic Field-Effect Transistors for Understanding the Mobility Overestimation Issue

Quantum Transport Study of Si Ultrathin-Body Double-Gate Pmosfets: ${I}$ – ${V}$ , ${C}$ – ${V}$ , Energy Delay, and Parasitic Effects

Effect of contact resistance in organic field‐effect transistors

Critical impact of gate dielectric interfaces on the contact resistance of high-performance organic field-effect transistors

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

Reducing contact resistance in bottom contact organic field effect transistors for integrated electronics

Band-Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization

Extracting contact effects in organic field-effect transistors

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

The Importance of Contact Resistance in High-Mobility Organic Field-Effect Transistors Studied by Scanning Kelvin Probe Microscopy

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors

Overestimation of Operational Stability in Polymer-Based Organic Field-Effect Transistors Caused by Contact Resistance

Realization of Ohmic-contact and velocity saturation in organic field-effect transistors by crystallized monolayer

Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors

Overestimation of Carrier Mobility in Organic Thin Film Transistors Due to Unaccounted Fringe Currents

Impact of Gate Coupling and Misalignment on Performance of Double-gate Organic Thin Film Transistors

Tunable contact resistance in double-gate organic field-effect transistors