Abstract:Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.

Overestimation of Operational Stability in Polymer-Based Organic Field-Effect Transistors Caused by Contact Resistance

Probing Bias Stress Effect And Contact Resistance In Bilayer Ambipolar Organic Field-Effect Transistors

Bias Stress Stability Improvement in Solution-Processed Low-Voltage Organic Field-Effect Transistors Using Relaxor Ferroelectric Polymer Gate Dielectric

Strain-dependent charge trapping and its impact on the operational stability of polymer field-effect transistors

Extracting contact effects in organic field-effect transistors

Gate Bias Stress in Pentacene Field-Effect-Transistors: Charge Trapping in the Dielectric or Semiconductor

Study on the Instability of Organic Field-Effect Transistors Based on Fluorinated Copper Phthalocyanine

Air- and Active Hydrogen-Induced Electron Trapping and Operational Instability in n-Type Polymer Field-Effect Transistors

Through thick and thin: tuning the threshold voltage in organic field-effect transistors

Comparing the Gate Dependence of Contact Resistance and Channel Resistance in Organic Field-Effect Transistors for Understanding the Mobility Overestimation Issue

Overestimation of Carrier Mobility in Organic Thin Film Transistors Due to Unaccounted Fringe Currents

Intrinsic Charge Carrier Mobility in Single-Crystal OFET by “fast Trapping Vs. Slow Detrapping” Model

High-Performance n-type Polymer Field-effect Transistors with Exceptional Stability

A comprehensive study of short channel effects in organic field-effect transistors

Understanding Thickness-Dependent Electrical Characteristics in Conjugated Polymer Transistors with Top-Gate Staggered Structure

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

Crucial role of interfacial thermal dissipation in the operational stability of organic field-effect transistors

Short Channel Effects in Regioregular Poly(Thiophene) Thin Film Transistors

Effects of Dielectric Material, HMDS Layer, and Channel Length on the Performance of the Perylenediimide-Based Organic Field-Effect Transistors

Improved Bias Stress Stability for Low-Voltage Polymer Otfts with Low-K/High-K Bilayer Gate Dielectric

Charge-Trapping-Induced Non-Ideal Behaviors in Organic Field-Effect Transistors.