Abstract:The successful commercialization of organic field‐effect transistors (OFETs) for advanced integrated organic electronics requires reducing device sizes, which inevitably clashes with the constraints imposed by the contact effects. Herein, it is demonstrated that the contact resistance in OFETs based on monolayer organic semiconductors is extremely low, especially at mild biasing conditions. The contributions of the access resistance and the metal–organic interface resistance are successfully disentangled for the first time. It is shown that, contrary to the conventional view, the contact resistance of monolayer OFETs in the saturation regime exhibits a very weak dependence on the source electrode length. In the monolayer OFETs based on 2,9‐didecyldinaphtho[2,3‐b:2’,3’‐f]thieno[3,2‐b]thiophene (C10‐DNTT), a gate‐voltage‐independent access resistivity (2.2 × 10−2 Ω cm2) at VDS = −1 mV is obtained, while the interfacial metal–organic Schottky contact resistance is found to be negligible. The depletion of a diode associated with the metal–organic interface expands with increasing VDS and eventually bottlenecks the device performance. Finally, how to overcome such a carrier depletion contact resistance bottleneck and achieve OFETs with outstanding performance are shown. These findings pave the way toward sophisticated organic electronic applications based on the use of monolayer OFETs. Herein, the contact resistance is studied in monolayer organic transistors with van der Waals electrodes. The contact resistivity reveals no gate‐dependent behavior under low drain‐source bias while the reverse diode in the metal–organic interface becomes dominated when drain‐source bias increases. Herein, a deep insight into the contact resistance of the monolayer organic transistors is provided.

Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors

Modified Transmission Line Model for Bottom-Contact Organic Transistors

Reducing contact resistance in bottom contact organic field effect transistors for integrated electronics

Modulating Contact Properties by Molecular Layers in Organic Thin‐film Transistors

Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors

Modified transmission-line method for evaluation of the contact resistance: Effect of channel-length-dependent threshold voltage

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

Contact Length Scaling in Graphene Field-Effect Transistors

Influence of contact resistance on the performance of high-mobility top-gate organic transistors with short channel lengths

Extracting contact effects in organic field-effect transistors

Understanding Thickness-Dependent Electrical Characteristics in Conjugated Polymer Transistors with Top-Gate Staggered Structure

Scaling Down Contact Length In Complementary Carbon Nanotube Field-Effect Transistors

Impact of Gate Coupling and Misalignment on Performance of Double-gate Organic Thin Film Transistors

Effect of contact resistance in organic field‐effect transistors

Metal contact effect on the performance and scaling behavior of carbon nanotube thin film transistors.

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

Effect of source–drain contact and channel length on the performance of vertical thin-film transistors

Abnormal Back Channel Leakage under Large Drain Voltage in Short Channel Organic Thin-Film Transistors

The Importance of Contact Resistance in High-Mobility Organic Field-Effect Transistors Studied by Scanning Kelvin Probe Microscopy

Influence of active layer thickness on the cut-off frequency of a-IGZO thin film transistors

Tuning Electrode Work Function and Surface Energy for Solution Shearing High-Performance Organic Field-Effect Transistors