Abstract:The successful commercialization of organic field‐effect transistors (OFETs) for advanced integrated organic electronics requires reducing device sizes, which inevitably clashes with the constraints imposed by the contact effects. Herein, it is demonstrated that the contact resistance in OFETs based on monolayer organic semiconductors is extremely low, especially at mild biasing conditions. The contributions of the access resistance and the metal–organic interface resistance are successfully disentangled for the first time. It is shown that, contrary to the conventional view, the contact resistance of monolayer OFETs in the saturation regime exhibits a very weak dependence on the source electrode length. In the monolayer OFETs based on 2,9‐didecyldinaphtho[2,3‐b:2’,3’‐f]thieno[3,2‐b]thiophene (C10‐DNTT), a gate‐voltage‐independent access resistivity (2.2 × 10−2 Ω cm2) at VDS = −1 mV is obtained, while the interfacial metal–organic Schottky contact resistance is found to be negligible. The depletion of a diode associated with the metal–organic interface expands with increasing VDS and eventually bottlenecks the device performance. Finally, how to overcome such a carrier depletion contact resistance bottleneck and achieve OFETs with outstanding performance are shown. These findings pave the way toward sophisticated organic electronic applications based on the use of monolayer OFETs. Herein, the contact resistance is studied in monolayer organic transistors with van der Waals electrodes. The contact resistivity reveals no gate‐dependent behavior under low drain‐source bias while the reverse diode in the metal–organic interface becomes dominated when drain‐source bias increases. Herein, a deep insight into the contact resistance of the monolayer organic transistors is provided.

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Study and Analysis of Simple and Precise of Contact Resistance Single-Transistor Extracting Method for Accurate Analytical Modeling of OTFTs Current-Voltage Characteristics: Application to Different Organic Semiconductors

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Modification of Indium Tin Oxide Electrodes by Fluorinated Silanes for Transparent Organic Thin-Film Transistors

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Extracting contact effects in organic field-effect transistors

Benchmarking contact quality in N-type organic thin film transistors through an improved virtual-source emission-diffusion model

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

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Modified transmission-line method for evaluation of the contact resistance: Effect of channel-length-dependent threshold voltage

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay

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Solution Processed High Performance Short Channel Organic Thin-Film Transistors with Excellent Uniformity and Ultra-low Contact Resistance for Logic and Display