Abstract:Ferroelectric thin films are still of interest as promising materials for miniature pyroelectric detectors or piezoelectric sensors. Traditional thermal treatment (electric furnace or powerful source of UV irradiation) of sol-gel films has problems in case of micro-composites and microsensors. It does not allow local treatment of selected layers of the composites. Localised and nondestructive treatment of the surface is possible by focused laser beam or electron beam of sufficient energy. The main advantage of laser processing is selection of separate layers of a multi-layered micro-composite for treatment by choosing a suitable wavelength. Particularly original techniques for production and treatment of PZT thin films are related to laser technologies applied to pulsed laser ablation [1] and cutting microstructures out of PZT films crystallised traditionally [2-4]. Most recently pulsed eximer lasers have been used to crystallise PZT sol-gel thin films [5]. The ArF laser radiation is absorbed within a too thin surface layer. In this case the film is defected by high thermal gradients arising between it and the substrate. Based on absorption spectra of lanthanum modified lead zirconate titanate Pb0.9La0.1(Zr0.65Ti0.35)O3 (PLZT10/65/35) ferroelectric ceramics [6] an idea of local and selective treatment of lead zirconite-titanate Pb(ZrXTi1-X)O3 (PZT) sol-gel film in the multilayer structure by CO2 laser radiation was formulated. Since materials used in microelectronics, such as Si, Ge, GaAs, are relatively transparent at λ = 10.6 μm, the CO2 laser may be preferable. It means that it would be possible to heat the PZT film without heating the Si substrate. The possibility to obtain PZT perovskite film on the SiO2/Si substrate by irradiation with CO2 laser was shown experimentally in our prior paper [7]. The present study has been focused on studies of CO2 laser induced crystallization in PZT sol-gel films by means of both X-ray diffraction and especially modified atomic force microscope. The following procedure was used to prepare solution for Pb(Zr0,58Ti0,42)3 (PZT58/42) sol-gel films. Ti etoxide and Zr propoxide each were added to CH3COOH by mixing for half an hour. Pb acetate was disolved in CH3COOH at warming. After that the mixtures of Ti and Zr were put together with added alcohol and mixed for 10 minutes. Then the Pb mixture was added and all the compounds were stirred 5 more minutes. Time of gelation of the obtained mixture was 2 months.. The sol-gel layers were made by dip-coating procedure. A thickness of sol-gel layer after one immersion was approximately 520 ± 40 nm. Prior to laser treatment the Si plate with sol-gel layer was annealed in oven at 450 C. The PZT sol-gel films were treated by means of CO2 laser set-up EPILOG 48 Series (SYNRAD). The laser operated in quasi CW mode. X-ray diffraction studies revealed the PZT perovskite structure (Pe) ratio growth at the expenses of pyrochlore structure (Py) with an increased power density of laser radiation (Figure 1). The ferroelectric and piezoelectric properties of laser treated and traditionally treated PZT films had to be investigated on micro-scale and nano-scale. Especially modified atomic force microscope NT-MDT Smena with Signal Recovery 7280 lock-in amplifier was used for microscale and nanoscale investigations. Some results of piezoelectric response measurements on nanoscale structure are shown on Figure 2. Poster

Sol Gel Derived Pzt Thin Films For Mems Applications

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Preparation and Application of Lead Zirconate Titanate (PZT) Films Deposited by Hybrid Process: Sol-Gel Method and Laser Ablation

Pulsed Laser Deposited Lead Zirconate Titanate Thin Films for Micro Actuators

Electrical and Mechanical Properties of PZT Thin Films Prepared by Hybrid Process of Sol-Gel Technique and Laser Ablation

Epitaxial Pzt Films Deposited By Pulsed Laser Deposition For Mems Application

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Preparation and characterization of lead zirconate titanate thick films prepared by chemical solution deposition for MEMS applications

Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited Through Sol-Gel Process

Fabrication of (100) Orientated PZT Thin Films for MEMS Applications

Polymer-Assisted Mod Preparation of Pbzr0.52ti0.48o3 Thick Films for Mems Applications

Preparation of A High-Quality Pzt Thick Film with Performance Comparable to Those of Bulk Materials for Applications in Mems

High Quality PZT Thick Films Using Silicon Mold Technique for MEMS Applications

Microstructure And Properties Of Sol-Gel Pzt Thin Films With Buffer Layers

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films

Precursor-Monomer Method of Sol-Gel for Fabrication Pt/Pzt/Pt Ferroelectric Films

ATOMIC FORCE MICROSCOPY AND X-RAY DIFFRACTION STUDIES OF Pb ( Zr 0

Preparation and Properties of Pzt Thin Films Produced by Decomposition of Metal Carboxylate Gels

Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

The Microstructure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films on Mica Substrates