ATOMIC FORCE MICROSCOPY AND X-RAY DIFFRACTION STUDIES OF Pb ( Zr 0

M. Knite,G. Mežinskis,I. Yuchnevicha,K. Kundziņš

Abstract:Ferroelectric thin films are still of interest as promising materials for miniature pyroelectric detectors or piezoelectric sensors. Traditional thermal treatment (electric furnace or powerful source of UV irradiation) of sol-gel films has problems in case of micro-composites and microsensors. It does not allow local treatment of selected layers of the composites. Localised and nondestructive treatment of the surface is possible by focused laser beam or electron beam of sufficient energy. The main advantage of laser processing is selection of separate layers of a multi-layered micro-composite for treatment by choosing a suitable wavelength. Particularly original techniques for production and treatment of PZT thin films are related to laser technologies applied to pulsed laser ablation [1] and cutting microstructures out of PZT films crystallised traditionally [2-4]. Most recently pulsed eximer lasers have been used to crystallise PZT sol-gel thin films [5]. The ArF laser radiation is absorbed within a too thin surface layer. In this case the film is defected by high thermal gradients arising between it and the substrate. Based on absorption spectra of lanthanum modified lead zirconate titanate Pb0.9La0.1(Zr0.65Ti0.35)O3 (PLZT10/65/35) ferroelectric ceramics [6] an idea of local and selective treatment of lead zirconite-titanate Pb(ZrXTi1-X)O3 (PZT) sol-gel film in the multilayer structure by CO2 laser radiation was formulated. Since materials used in microelectronics, such as Si, Ge, GaAs, are relatively transparent at λ = 10.6 μm, the CO2 laser may be preferable. It means that it would be possible to heat the PZT film without heating the Si substrate. The possibility to obtain PZT perovskite film on the SiO2/Si substrate by irradiation with CO2 laser was shown experimentally in our prior paper [7]. The present study has been focused on studies of CO2 laser induced crystallization in PZT sol-gel films by means of both X-ray diffraction and especially modified atomic force microscope. The following procedure was used to prepare solution for Pb(Zr0,58Ti0,42)3 (PZT58/42) sol-gel films. Ti etoxide and Zr propoxide each were added to CH3COOH by mixing for half an hour. Pb acetate was disolved in CH3COOH at warming. After that the mixtures of Ti and Zr were put together with added alcohol and mixed for 10 minutes. Then the Pb mixture was added and all the compounds were stirred 5 more minutes. Time of gelation of the obtained mixture was 2 months.. The sol-gel layers were made by dip-coating procedure. A thickness of sol-gel layer after one immersion was approximately 520 ± 40 nm. Prior to laser treatment the Si plate with sol-gel layer was annealed in oven at 450 C. The PZT sol-gel films were treated by means of CO2 laser set-up EPILOG 48 Series (SYNRAD). The laser operated in quasi CW mode. X-ray diffraction studies revealed the PZT perovskite structure (Pe) ratio growth at the expenses of pyrochlore structure (Py) with an increased power density of laser radiation (Figure 1). The ferroelectric and piezoelectric properties of laser treated and traditionally treated PZT films had to be investigated on micro-scale and nano-scale. Especially modified atomic force microscope NT-MDT Smena with Signal Recovery 7280 lock-in amplifier was used for microscale and nanoscale investigations. Some results of piezoelectric response measurements on nanoscale structure are shown on Figure 2. Poster

Physics,Materials Science