Abstract:Among the many ferroelectric film fabrication techniques, the sol-gel process provides high purity, large deposition area and easy composition control. However, the thickness limit of a crack-free single-layer film is about 0.2 mum and about 10 times of coating and thermal treatment processing are needed to deposit 1.5 mum-thick films. In laser ablation, the deposition rate is expected to be 1-2 mum/h, but the film quality is lower than that deposited by the sol-gel method. In this work, the hybrid process, involving the sol-gel method and laser ablation, was used to make 1.65 mum-thick lead zirconate titanate (PZT) films with well-crystallized perovskite phase at the (111) orientation. We deposited (111)-oriented 0.15 mum-thick PZT film on Pt/Ti/SiO2/Si substrates using the sol-gel method and then deposited 1.5 mum-thick PZT films by laser ablation. The remanent polarization of 28.6 muC/cm(2) and the coercive field of 58.0 kV/cm were obtained while the dielectric constant and loss values measured at 1 kHz were approximately 1050 and 0.045, respectively. The piezoelectric coefficient d(31) was also investigated and found to be 16.65 +/- 4 pC/N. In the application, a micromirror actuated by the hybrid PZT films was designed and fabricated successfully by a three-mask lithography process. The scanning angle of 6 2 degrees was demonstrated, while resonating with 5 V-p.p at the resonance frequency (1975 Hz).

Preparation and Properties of Pzt Thin Films Produced by Decomposition of Metal Carboxylate Gels

Preparation of PZT Thick Film by a High Speed Sol-gel Method

PREPARATION OF PZT THICK FILMS BY ELECTROPHORETIC DEPOSITION AND ITS PROPERTY

Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited Through Sol-Gel Process

Structures and Properties of Pb(Zr,Ti)O3thin Films by Metallo-Organic Compound Decomposition Process

Effect of Poly(Vinyl Acetate) on Structures and Properties of Pbzr0.52ti0.48o3 Thick Films

Polymer-Assisted Mod Preparation of Pbzr0.52ti0.48o3 Thick Films for Mems Applications

Electrical and Mechanical Properties of PZT Thin Films Prepared by Hybrid Process of Sol-Gel Technique and Laser Ablation

Low Temperature Preparation Of Sol-Gel Pzt Thin Film Annealed At 160 Degrees C By Hydrothermal Method

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Preparation and characterization of Sol-Gel derived PZT bulk ceramics and thin films

The Preparation and Characterization of the PZT Thin Film with (100) Peak Preferred Orientation

Pb(Zr,Ti)O-3 Thin Films Prepared on Pbtio3/Si(100) by Chemical Solution Decomposition Technique

Sol Gel Derived Pzt Thin Films For Mems Applications

Preparation and Application of Lead Zirconate Titanate (PZT) Films Deposited by Hybrid Process: Sol-Gel Method and Laser Ablation

Precursor-Monomer Method of Sol-Gel for Fabrication Pt/Pzt/Pt Ferroelectric Films

Preparation and Characterization of Pb(ZrxTi1-x)O3 Thin Film on Indium Tin Oxide

Preparation on the [(Pb,La) (Zr,Ti)O3] ferroelectric thin films by using the Sol-Gel processing

Low Temperature Preparation of Sol-Gel PZT Thin Film Annealed at 160°C by Hydrothermal Method

Preparation and characterization of lead zirconate titanate thick films prepared by chemical solution deposition for MEMS applications