A Miniature Ionization Vacuum Sensor With a SiO_x-Based Tunneling Electron Source

Wei Yang,Wenchao Liu,Xun Wang,Zhiwei Li,Fangyuan Zhan,Gengmin Zhang,Xianlong Wei

DOI: https://doi.org/10.1109/TED.2021.3102089

IF: 3.1

2021-01-01

IEEE Transactions on Electron Devices

Abstract:A miniature ionization vacuum sensor (IVS) based on an on-chip SiOx-based tunneling electron source is reported. The vacuum sensor fabricated by microfabrication technologies exhibits a compact multilayered structure with overall dimensions of 13 x 9 x 2.7 mm(3), where the electron source chip, Si layer of the electron collector, Si layer of the ion collector, and glass spacers between them are stacked together by an anodic bonding method. Electron impact ionization occurs in a semiclosed cavity through the electron and ion collector layers and glass spacers. Because of the compact structure, low working voltage of SiOx-based tunneling electron sources, and stable electron emission of the electron sources in a poor vacuum, a wide linear detection range from 1.3 x 10(-2) to 133 Pa and a sensitivity of 8.3 x 10(-4) Pa-1 have been demonstrated for the devices. These advantages, including miniature size, a detection range up to the rough vacuum regime, and the capability of batch fabrication with microfabrication technologies, make our IVSs promising in vacuum measurements.