Abstract:Over the past several years, the formation of nanowire heterostructures via a solid-state reaction between a semiconductor nanowire and metal contact pads has attracted great interest. This is owing to its ready application in nanowire field-effect transistors (FETs) with a well-controlled channel length using a facile rapid thermal annealing process. We report the effect of oxide confinement on the formation of Ge nanowire heterostructures via a controlled reaction between a vapor-liquid-solid-grown, single-crystalline Ge nanowire and Ni pads. In contrast to the previous formation of Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni(2)Ge and Ge with the confinement of Al(2)O(3) during annealing. Significantly, back-gate FETs based on this Ni(2)Ge/NiGe/Ge/NiGe/Ni(2)Ge heterostructure demonstrated a high-performance p-type transistor behavior, showing a large on/off ratio of more than 10(5) and a high normalized transconductance of 2.4 μS/μm. The field-effect hole mobility was extracted to be 210 cm(2)/(V s). Temperature-dependent I-V measurements further confirmed that NiGe has an ideal ohmic contact to p-type Ge with a small Schottky barrier height of 0.11 eV. Moreover, the hysteresis during gate bias sweeping was significantly reduced after Al(2)O(3) passivation, and our Ω-gate Ge nanowire FETs using Al(2)O(3) as the top-gate dielectric showed an enhanced subthreshold swing and transconductance. Therefore, we conclude that the Al(2)O(3) layer can effectively passivate the Ge surface and also serve as a good gate dielectric in Ge top-gate FETs. Our innovative approach provides another freedom to control the growth of nanowire heterostructure and to further achieve high-performance nanowire transistors.

Al2O3 Diffusion Barrier: In-Situ Observation of the Formation of NiSi/Ni2Si Heterojunction in SiGe Nanowire with Al2O3 Diffusion Barrier Layer (Adv. Mater. Interfaces 14/2021)

In-Situ Observation of the Formation of NiSi/Ni<sub>2</sub>Si Heterojunction in SiGe Nanowire with Al<sub>2</sub>O<sub>3</sub> Diffusion Barrier Layer

Au5si2/Si Heterojunction Nanowires Formed by Combining Sio Evaporation with Vapour-Liquid-Solid Mechanism

Study of Ni/Si(100) solid-state reaction with Al addition

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Alloying Effects in Ni Silicide for CMOS Applications

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

The Modulation of Schottky Barrier Height of NiSi/n-Si Schottky Diodes by Silicide As Diffusion Source Technique

In‐situ Observation of Atomic Diffusion at Epitaxial Al/Si Interface

Comparison between the solid state reaction of ultrathin Ni and Ni/Ti with Si nanowire on silicon-on-insulator

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Preparation of Nisi2 Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation

Electroless Ni–Mo–P Diffusion Barriers with Pd-activated Self-Assembled Monolayer on SiO2

Atomically Smooth P-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature