Abstract:Data-driven computing is highly dependent on memory performance. Flash memory is presently the dominant non-volatile memory technology but suffers from limitations in terms of speed. Two-dimensional (2D) materials could potentially be used to create ultrafast flash memory. However, due to interface engineering problems, ultrafast non-volatile performance is presently restricted to exfoliated 2D materials, and there is a lack of performance demonstrations with short-channel devices. Here, we report a scalable integration process for ultrafast 2D flash memory that can be used to integrate 1,024 flash-memory devices with a yield of over 98%. We illustrate the approach with two different tunnelling barrier configurations of the memory stack (HfO2/Pt/HfO2 and Al2O3/Pt/Al2O3) and using transferred chemical vapour deposition-grown monolayer molybdenum disulfide. We also show that the channel length of the ultrafast flash memory can be scaled down to sub-10 nm, which is below the physical limit of silicon flash memory. Our sub-10 nm devices offer non-volatile information storage (up to 4 bits) and robust endurance (over 105). A scalable integration process for ultrafast two-dimensional flash memory can be used to integrate 1,024 devices with a yield of over 98%. The channel length of the devices could also be scaled down to sub-10 nm.

FLASH MEMORY AND FABRICATING AND OPERATING METHOD THEREOF

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

A Novel Dual-Doping Floating-Gate (ddfg) Flash Memory Featuring Low Power and High Reliability Application

A novel flash memory cell and design optimization for high density and low power application

A Novel High Programming Efficiency and Highly Scalable Flash Memory Cell Based on Tunneling Fet (Tfet)

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

Dual Floating Gate Flash Cell Using Single Poly Processes

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

Downsizing and Memory Array Integration of Pt/Srbi2ta2o9/Hf-Al-O/Si Ferroelectric-Gate Field-Effect Transistors

High-gate-injection Tunneling Field Effect Transistor for Flash Memory Applications

A Scalable Integration Process for Ultrafast Two-Dimensional Flash Memory

A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

A Novel Flash Memory Using Band-to-Band Tunneling In duced Hot Electron Injection to Program

Flash-Speicher mit Siliziumnitridschicht zwischen Source-Anschluss und Kanal und Verfahren zu seiner Herstellung

Transparent Multi-Level NAND Flash Memory and Circuits Based on ZnO Thin Film Transistor

METHOD OF USING SPLIT GROOVE GATE FLASH MEMORY FOR FOUR-BIT STORAGE

Structure and function research on FLASH memory