Abstract:Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam synthesis (IBS). Here, we present both experimental and theoretical studies on IBS of multi-dot layers consisting of Si nanocrystals (NCs). The NCs are produced by ultra low energy Si ion implantation, which causes a high Si supersaturation in the shallow implantation region. During post-implantation annealing, this supersaturation leads to phase separation of the excess Si from the SiO2. Till now, the study of this phase separation process suffered from the weak Z contrast between Si and SiO2 in Transmission Electron Microscopy (TEM). Here, this imaging problem is resolved by mapping Si plasmon losses with a Scanning Transmission Electron Microscopy equipped with a parallel Electron Energy Loss Spectroscopy system (PEELS-STEM). Additionally, kinetic lattice Monte Carlo simulations of Si phase separation have been performed and compared with the experimental Si plasmon maps. It has been predicted theoretically that the morphology of the multi-dot Si floating-gate changes with increasing ion fluence from isolated, spherical NCs to percolated spinodal Si pattern. These patterns agree remarkably with PEELS-STEM images. However, the predicted fluence for spinodal patterns is lower than the experimental one. Because oxidants of the ambient atmosphere penetrate into the as-implanted SiO2, a substantial fraction of the implanted Si might be lost due to oxidation.

Flash-Speicher mit Siliziumnitridschicht zwischen Source-Anschluss und Kanal und Verfahren zu seiner Herstellung

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

FLASH MEMORY AND FABRICATING AND OPERATING METHOD THEREOF

Halbleiterspeichermatrix und Verfahren zu ihrer Programmierung

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Self-Consistent Simulation of Quantum Dot Flash Memory Device with Sio2 and Hfo2 Dielectrics

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

METHOD OF USING SPLIT GROOVE GATE FLASH MEMORY FOR FOUR-BIT STORAGE

HOCHKONSISTENTER UND ENERGIESPARENDER RESISTIVER SPEICHER UND VERFAHREN ZU DESSEN HERSTELLUNG

Large Storage Window in a-SiN <sub> <i>x</i> </sub> /nc-Si/a-SiN <sub> <i>x</i> </sub> Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

A Novel 3D NOR Flash with Single-Crystal Silicon Channel: Devices, Integration, and Architecture

A Novel Non-Planar Cell Structure for Flash Memory

A Novel Dual-Doping Floating-Gate (ddfg) Flash Memory Featuring Low Power and High Reliability Application

Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling

A Scalable Integration Process for Ultrafast Two-Dimensional Flash Memory

Multi-Dot Floating-Gates for Nonvolatile Semiconductor Memories - Their Ion Beam Synthesis and Morphology

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application