Abstract:Devices based on charge trapping are a promising solution for Flash memory scaling. The nonconductivity of their storage medium makes them more robust with respect to data loss by charge leakage through the bottom oxide, which, on the contrary sets a hard limit to floating-gate Flash scalability. Their simple processing, highly compatible with CMOS, makes them rapidly integrable into short-term solutions. The well-known SONOS concept however, still suffers from insufficient data throughput and retention. On the other hand, the recently proposed NROM concept, storing two bits in a cell, offers very interesting characteristics by using hot carrier based program/erase operations. However, important drawbacks remain, like insufficient isolation of the bits for scalability, high-power programming, and degradation of the retention after cycling. In this paper, we present a dual-bit trapping device which solves most of these problems by using a split-gate structure which was inspired by the HIMOS concept. The device has a fully self-aligned structure which allows for both bits to be physically isolated in the cell. Those features make it very scalable. Programming can be performed by the very efficient source-side injection mechanism, while erase is done by injection of band-to-band tunneling induced hot holes, which compensate for the trapped electrons. This leads to performances comparable to NROM but with lower power consumption, and lower operating voltages.

METHOD OF USING SPLIT GROOVE GATE FLASH MEMORY FOR FOUR-BIT STORAGE

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

Device Scaling Considerations for Sub-90-nm 2-Bit/cell Split-Gate Flash Memory Cell

FLASH MEMORY AND FABRICATING AND OPERATING METHOD THEREOF

A Novel Flash Memory Using Band-to-Band Tunneling In duced Hot Electron Injection to Program

Novel flash memory using band-to-band tunneling induced hot electron injection to program

Novel p-Channel Selected n-Channel Divided Bit-Line NOR Flash Memory Using Source Induced Band-to-Band Hot Electron Injection Programming

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts

A Design of Four Dies Parallel NAND Flash Memory Controller Supporting Toggle and ONFI mode

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications

Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology

A Novel Dual-Doping Floating-Gate (ddfg) Flash Memory Featuring Low Power and High Reliability Application

A Novel Vertical Channel Self-Aligned Split-Gate Flash Memory

Dual Floating Gate Flash Cell Using Single Poly Processes

Fabrication and Characterization of A Novel Fully Self-Aligned Split-Gate Sonos Memory Device