Abstract:In this paper, we propose an optimized device structure with a highly stable process that addresses threshold voltage shift issues in the String-Select-Line (SSL) and Ground-Select-Line (GSL) gates using ferroelectric memory in 3D NAND flash memory applications. The proposed device utilizes nickel (Ni) instead of tungsten (W) for the GSL and SSL gates, enabling optimized polarization properties during the annealing process and leveraging the disparity in thermal expansion coefficients. Notably, the difference in thermal expansion coefficient from tungsten (W), employed in other Word Line (WL) gates, allows effective control over polarization properties. To validate the proposed structure, we fabricated and measured a Metal–Ferroelectric–Insulator–Silicon (MFIS) capacitor utilizing Hafnium–Zirconium Oxide (HZO) material. The measurement results indicate that a change in the upper metal layer results in a more than fivefold increase in the variance of polarization characteristics between the WL gates (responsible for the memory function) and the SSL and GSL gates dedicated to channel control. In addition, process simulation was conducted using the same device structure, confirming the application of tensile stress to the HZO thin film in the case of a W electrode and compressive stress in the case of a Ni electrode. Furthermore, applying this controlled polarization characteristic parameter to the 3D NAND flash memory structure revealed a reduction in the threshold voltage shift of the control gate from a previous change of 2.6 V or more to 0.05 V, facilitating stable control.

Structure and function research on FLASH memory

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Self-Consistent Simulation of Quantum Dot Flash Memory Device with Sio2 and Hfo2 Dielectrics

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Simulation Of A New Eeprom Flash Memory Cell For High Density Applications

Simulation of Program Characteristics of Nanocrystal Flash Memory Devices

Dependence Of Electrons Loss Behavior On The Nitride Thickness And Temperature For Charge Trap Flash Memory Applications

An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

A Novel Flash Memory Using Band-to-Band Tunneling In duced Hot Electron Injection to Program

A novel flash memory cell and design optimization for high density and low power application

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

FLASH MEMORY AND FABRICATING AND OPERATING METHOD THEREOF

A Novel Non-Planar Cell Structure for Flash Memory

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

A Novel High-Density Source-Side-Injection Flash Memory Cell with Vertical Channel

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling

Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory Cell

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization