Abstract:Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should be transferable also to other wurtzite semiconductors.

Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown M‐plane GaN Substrate

Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metalorganic chemical vapor deposition

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Cathodoluminescence study of GaN-based film structures

Luminescence associated with stacking faults in GaN

Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

Dislocation Clustering and Luminescence Nonuniformity in Bulk Gan and Its Homoepitaxial Film

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN

Elimination of basal-plane stacking faults in semipolar/nonpolar GaN and light emitting diodes heteroepitaxially grown on sapphire substrates

Cathodoluminescene Study of Mg Implanted GaN: the Impact of Dislocation on Mg Diffusion

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

In Situ Site-Speci fi c Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar ( 11 2̅ 2 ) GaN

Cathodoluminescence Study on the Impurity Behaviors at Threading Dislocations in GaN

Electron-Beam-Induced Current Study Of Stacking Faults And Partial Dislocations In 4h-Sic Schottky Diode