Abstract:With the sub-bandgap optical excitation, thermal dynamics of holes among multiple levels in n-type GaN epilayers with different dopants of Si, Ge and C are investigated via measuring and modeling variable-temperature yellow luminescence (YL) band of the samples. In sharp contrast to the case of above-bandgap optical excitation, the variable-temperature YL band of all the studied GaN samples including unintentionally-doped sample exhibit unusual negative thermal quenching (NTQ) behavior, suggesting a possible physical mechanism, namely thermally induced migration of holes from shallower levels to the luminescent deep level. By considering the possible presence of multiple hole levels in the doped GaN samples, a phenomenological model is developed for the thermal transfer of holes among the multi-levels and the interpretation of the observed NTQ phenomenon of the YL band. Different activation energies of 347.9, 520.8 and 348.5 meV are obtained for the Ge-doped, high C-containing, and Si-doped GaN samples, respectively. The results reveal the existence of multiple hole defect levels in the n-type GaN. Possible microstructural origins causing these different hole levels are further argued. The study may shed some light on the nature of various defect complexes in the technologically important GaN epilayers. Combined microstructural and optical investigations need to be further done for elucidating various optically- and electrically-active defect complexes in GaN.

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Correlation of Doping, Structure, and Carrier Dynamics in a Single GaN Nanorod

Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown M‐plane GaN Substrate

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Luminescence associated with stacking faults in GaN

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metalorganic chemical vapor deposition

Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Cathodoluminescence study of GaN-based film structures

Dislocation Clustering and Luminescence Nonuniformity in Bulk Gan and Its Homoepitaxial Film

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

Dopant Effects on Defects in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

Carrier transport and luminescence properties of n-type GaN

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

Study of Optical Properties of Bulk GaN Crystals Grown by HVPE

Role of Edge Dislocation and Si Impurity in Linking the Blue Luminescence and Yellow Luminescence in N-Type GaN Films

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures