Abstract:InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the efficiency of LEDs especially for long wavelength emitters. In this work we evidence that the growth of staggered QWs has also another beneficial effect as it allows to reduce the formation of defects, responsible for nonradiative Shockley-Read-Hall recombination, at the bottom interface of the QW. Staggered QWs comprised an InGaN layer of an intermediate In content between the barrier and the QW. We show that insertion of such a layer results in a significant increase of the luminescence intensity, even if the calculated wavefunction overlap drops. We study the dependence of the thickness of such an intermediate In content layer on photoluminescence (PL) intensity behavior. Staggered QWs exhibit increased cathodoluminescence (CL) homogeneity that is a fingerprint of lower density of defects, in contrast to standard QWs for which high density of dark spots are observed in QW emission mapping. Transmission electron microscopy of standard QWs revealed formation of basal-plane stacking faults (BSFs) and voids that could have resulted from vacancy aggregation. Stepwise increase of the In content in staggered QWs prevents formation of point defects and results in an increased luminescence efficiency. The In composition difference between the barrier and the well is therefore a key parameter to control the formation of point defects in the high-In content QWs, influencing the luminescence efficiency.

Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

Luminescence associated with stacking faults in GaN

In Situ Mechanical Resonance Behaviour of Pristine and Defective Zinc Blende GaAs Nanowires

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Stacking defects in GaP nanowires: Electronic structure and optical properties

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Formation of stacking faults and the screw dislocation-driven growth: a case study of aluminum nitride nanowires.

Theoretical Study about the Formation of the Stacking Faults in GaN Nanowires along Different Growth Directions

Individually Resolved Luminescence from Closely Stacked GaN/AlN Quantum Wells

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

Energetics, electronic structure and electric polarization of basal stacking faults in wurtzite GaN and ZnO

Alloy segregation at stacking faults in zincblende GaN heterostructures

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Cathodoluminescence and Scanning Transmission Electron Microscopy Study of InGaN/GaN Quantum Wells in Core-Shell GaN Nanowires

Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters

Strengthening Brittle Semiconductor Nanowires Through Stacking Faults: Insights from in Situ Mechanical Testing.

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown M‐plane GaN Substrate

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

Zn-dopant dependent defect evolution in GaN nanowires

Multimicroscopy of cross-section zincblende GaN LED heterostructure