Abstract:Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires

Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect

Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires

Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON, and 3on–val Surface Defects

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Luminescence properties of defects in GaN

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires

Origin Of A Wide And Asymmetric Blue Luminescence Band In Ain Nanowires: V-N, V-Ai, O-N, And 30(N)-Va(I) Surface Defects

Nanoscale Characterization of V-defect in InGaN/GaN QWs LEDs using Near-Field Scanning Optical Microscopy.

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Luminescence associated with stacking faults in GaN

GaN as a Material Platform for Single‐Photon Emitters: Insights from Ab Initio Study

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Engineering Edge States of Graphene Nanoribbons for Narrow-Band Photoluminescence

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature

Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence

Atomistic Origins of Various Luminescent Centers and n-Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach

Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces