Abstract:Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering.

Engineering Edge States of Graphene Nanoribbons for Narrow-Band Photoluminescence

Contrastive band gap engineering of strained graphyne nanoribbons with armchair and zigzag edges

Green Light-Emitting Diode Based on Graphene-Zno Nanowire Van Der Waals Heterostructure

Emissive brightening in molecular graphene nanoribbons by twilight states

Multicolor Graphene Nanoribbon/Semiconductor Nanowire Heterojunction Light-Emitting Diodes

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Narrowband Electroluminescence from Color Centers in Hexagonal Boron Nitride

Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure

Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires

Experimental Observation of Strong Exciton Effects in Graphene Nanoribbons

Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors

Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions

Fermi-Level Engineering of Nitrogen Core-Doped Armchair Graphene Nanoribbons

Controlled Preparation and Device Application of Sub-5 Nm Graphene Nanoribbons and Graphene Nanoribbon/Carbon Nanotube Intramolecular Heterostructures

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

Interface Coupling As a Crucial Factor for Spatial Localization of Electronic States in a Heterojunction of Graphene Nanoribbons

Tunable quantum dots from atomically precise graphene nanoribbons using a multi-gate architecture

Gate Modulation on Angle-Resolved Photoabsorption Spectra of Zigzag-Edge Graphene Nanoribbons

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Current-induced brightening of vacancy-related emitters in hexagonal boron nitride

Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect