Strengthening Brittle Semiconductor Nanowires Through Stacking Faults: Insights from in Situ Mechanical Testing.

Bin Chen,Jun Wang,Qiang Gao,Yujie Chen,Xiaozhou Liao,Chunsheng Lu,Hark Hoe Tan,Yiu-Wing Mai,Jin Zou,Simon P. Ringer,Huajian Gao,Chennupati Jagadish
DOI: https://doi.org/10.1021/nl402180k
IF: 10.8
2013-01-01
Nano Letters
Abstract:Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of similar to 5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of similar to 9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.
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