Abstract:Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is globally pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the green gap. ZnGeN2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN2/GaN hybrid structures are theorized to emit green (∼530 nn) light with a spontaneous emission rate 4.6-4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

Alloy segregation at stacking faults in zincblende GaN heterostructures

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Formation of stacking faults and the screw dislocation-driven growth: a case study of aluminum nitride nanowires.

Experimental Characterization and First-Principles Calculations of Zn Segregation at the Β″-Mg5al2si4/al Interfaces in Al-Mg-Si Alloys

Probing alloy formation using different excitonic species: The particular case of InGaN

Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metalorganic chemical vapor deposition

Structure, defects, and optical properties of commensurate GaN/ZnGeN2/GaN double heterojunctions

Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Influence of V/III Flux Ratio on Electrical Properties of AlInGaN/Gan Heterostructures Grown by MOCVD

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Strain-Induced Half-Metallicity of Alkaline-Earth Alloyed Zinc-Blende SiC and GaN

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1- xN

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations