Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Development of HSQ Replacement Gate Process for Silicon Nanowire MOS Devices

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Optimization of zero-level interlayer dielectric materials for gate-all-around silicon nanowire channel fabrication in a replacement metal gate process

A method for producing surround gate silicon nanowire transistor with air as the side wall

Rectangular Suspended Single Crystal Si Nanowire with (001) Planes and <001> Direction Developed Via TMAH Wet Chemical Etching

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

A Dual-Metal Gate Integration Process For Cmos With Sub-1-Nm Eot Hfo2 By Using Hfn Replacement Gate

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

Si Nanowire - Array Source Gated Transistors

Vertical Sandwich GAA FETs with Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack

Siconi Process Applications Study for 28nm Technology Node and Beyond

Fabrication of High-Uniformity and High-Reliability Si 3 N 4 /algan/gan MIS-HEMTs with Self-Terminating Dielectric Etching Process in a 150-Mm Si Foundry

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate

Fabrication and Transport Behavior Investigation of Gate-All-Around Silicon Nanowire Transistor from Top-Down Approach

A Self-Aligned Gate-All-Around Mos Transistor On Single-Grain Silicon

Fabrication process and failure analysis for robust quantum dots in silicon

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Precise morphology control of in-plane silicon nanowires via a simple plasma pre-treatment