A Dual-Metal Gate Integration Process For Cmos With Sub-1-Nm Eot Hfo2 By Using Hfn Replacement Gate

C Ren,Hy Yu,Jf Kang,Xp Wang,Hhh Ma,Yc Yeo,Dsh Chan,Mf Li,Dl Kwong

DOI: https://doi.org/10.1109/LED.2004.832535

IF: 4.8157

2004-01-01

IEEE Electron Device Letters

Abstract:A novel replacement gate process employing a HfN dummy gate and sub-1-nm equivalent oxide thickness (EOT) HfO2 gate dielectric is demonstrated. The excellent thermal stability of the HfN-HfO2 gate stack enables its use in high temperature CMOS processes. The replacement of HfN with other metal gate materials with work functions adequate for n- and pMOS is facilitated by a high etch selectivity of HfN with respect to HfO2, without any degradation to the EOT, gate leakage, or time-dependent dielectric breakdown characteristics of HfO2. By replacing the HfN dummy gate with Ta and Ni in nMOS and pMOS devices, respectively, a work function difference of similar to0.8 eV between nMOS and pMOS gate electrodes is achieved. This process could be applicable to sub-50-nm CMOS technology employing ultrathin HfO2 gate dielectric.