Abstract:Journal of Circuits, Systems and Computers, Ahead of Print. This paper puts forward a new vertical-tunneling-attributed dual-material double-gate heterojunction-TFET (VTDMDG-HTFET). The device structure of VTDMDG-HTFET includes Si[math]Ge[math] material for the designing of source region. The mechanism of vertical tunneling in VTDMDG-HTFET provides superior electric field at tunneling interface and leads to improved transfer characteristics. VTDMDG-HTFET also includes metal gate work-function engineering approach to facilitate high ON-current and small OFF-current. Application of high-[math] dielectric material HfO2 in the form of gate oxide enhances the capacitive-coupling at channel-source interface. Moreover, the work includes the comparison of proposed VTDMDG-HTFET with the conventional vertical-tunneling based dual-material double-gate-TFET (VTDMDG-TFET). It has been observed from the simulation results that SiGe source-based VTDMDG-HTFET offers better DC characteristics in terms of superior ON-current, smaller OFF-current, steeper subthreshold-slope, lower threshold voltage, higher transconductance along with smaller drain-induced barrier-lowering (DIBL) effects as compared to its counterpart silicon-source-based VTDMDG-TFET. In this work, reliability of VTDMDG-HTFET has also been examined and compared with VTDMDG-TFET in terms of temperature sensitivity and effect of different interface trap charges. The device simulation and investigations have been carried out using technology computer aided design (TCAD) tool. Moreover, device circuit mixed-mode simulation analysis is carried out for conventional and proposed device based resistive load inverters. A comparison is performed between both the inverters in terms of prorogation delay and switching threshold voltages. Further, the mixed mode simulation analysis is also performed for the proposed device based inverter under the influence of different interface trap charges (ITCs). Study shows that reliability performance of the proposed device is better as compared to its counterpart conventional device. Hence, vertical tunneling and SiGe source-based VTDMDG-HTFET can be a better choice for various applications such as analog/RF, analog and digital electronic circuits, energy harvesting, gas-sensing and memory devices.

Improved Drain Current Characteristics of HfO2/SiO2 Dual Material Dual Gate Extension on Drain Side-TFET

The Effect of a Dual Oxide - Dual Gate Material and a Sensitivity Analysis on the Performance of a Junctionless Tunnel FET

Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET

Design of a Dual-Material Gate LDMOS

Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments

Investigation of the Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistor

Charactcristics Of Sub-1 Nm Cvid Hfo2 Gate Dielectrics With Hfn Electrodcs For Advanccd Cmos Applications

Impact of High-K Gate Dielectric Materials on Uniformly Doped Dual Gate FinFET for Analog and Digital Applications

Mole Fraction and Device Reliability Analysis of Vertical-Tunneling-Attributed Dual-Material Double-Gate Heterojunction-TFET with [math] Source Region at Device and Circuit Level

Investigations on In0.12Al0.88N/AlN/AlxGa1−xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance

Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

Characteristics of sub-1 nm CVD HfO/sub 2/ gate dielectrics with HfN electrodes for advanced CMOS applications

Improving on current using new double-material heterojunction gate all around TFET (DMHJGAA TFET): Modeling and simulation

Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

Reduced OFF-state current and suppressed ambipolarity in a dopingless vertical TFET with dual-drain for high-frequency circuit applications

Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric Materials in 5 nm Technology: A Simulation Study

Research on Characteristics of Dual-Material Gate MOSFET in 22nm Technology Node

Design and analysis of dual gate MOSFET with spacer engineering

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS