Abstract:High‐quality c‐axis‐aligned crystalline indium gallium tin oxide (CAAC–IGTO) semiconductor can be achieved by annealing of a‐IGTO in O2 furnace at 700 °C. The O vacancy‐rich CAAC‐IGTO semiconductor has ferroelectric‐like properties. As a result, synaptic CAAC‐IGTO TFT can mimic the electrical characteristics of biological synapses using a conventional SiO2 gate insulator. Therefore, the CAAC‐IGTO TFTs can be applied to highly integrated neuromorphic electronics. Artificial synapses are a key component of neuromorphic computing systems. To achieve high‐performance neuromorphic computing ability, a huge number of artificial synapses should be integrated because the human brain has a huge number of synapses (≈1015). In this work, a coplanar synaptic, thin‐film transistor (TFT) made of c‐axis‐aligned crystalline indium gallium tin oxide (CAAC–IGTO) is developed. The electrical characteristics of the biological synapses such as inhibitory postsynaptic current (IPSC), paired‐pulse depression (PPD), short‐term plasticity (STP), and long‐term plasticity at VDS = 0.1 V, are demonstrated. The measured synaptic behavior can be explained by the migration of positively charged oxygen vacancies (Vo+/Vo++) in the CAAC–IGTO layer. The mechanism of implementing synaptic behavior is completely new, compared to previous reports using electrolytes or ferroelectric gate insulators. The advantage of this device is to use conventional gate insulators such as SiO2 for synaptic behavior. Previous works use chitosan, Ta2O3, SiO2 nanoparticles , Gd2O3, and HfZrOx for gate insulators, which cannot be used for high integration of synaptic devices. The metal–oxide TFTs, widely used in the display industry, can be applied to the synaptic transistors. Therefore, CAAC–IGTO synaptic TFT can be a good candidate for application as an artificial synapse for highly integrated neuromorphic chips.

Synaptic Plasticity in Novel Non-Volatile FET with Amorphous Gate Insulator Enabled by Oxygen Vacancy Related Dipoles

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Pulsed Laser Deposition of a Ga2O3 Thin Film for an Optoelectronic Synaptic Device.

Non-Volatile FETs with Amorphous (Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, ZrO<sub>2</sub>, etc.) Gate Insulators

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

Ferroelectric-Like Non-Volatile FET with Amorphous Gate Insulator for Supervised Learning Applications

Synaptic Characteristics and Neuromorphic Computing Enabled by Oxygen Vacancy Migration Based on Porous In2O3 Electrolyte-Gated Transistors

Synaptic Characteristics and Neuromorphic Computing Enabled by Oxygen Vacancy Migration Based on Porous In 2 O 3 Electrolyte-Gated Transistors

Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor

Analog Synapses Based on Nonvolatile FETs with Amorphous ZrO2 Dielectric for Spiking Neural Network Applications

Analog Synapses Based on Nonvolatile FETs With Amorphous ZrO 2 Dielectric for Spiking Neural Network Applications

Memory Behavior of an Al 2 O 3 Gate Dielectric Non-Volatile Field-Effect Transistor

Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

All-metal Oxide Synaptic Transistor with Modulatable Plasticity.

Long-Term Synaptic Plasticity Emulated in Modified Graphene Oxide Electrolyte Gated IZO-Based Thin-Film Transistors.

Oxygen Vacancy-Induced Synaptic Plasticity in InAlZnO Nanofiber Transistors for Low-Power Neuromorphic Electronics

Synaptic Metaplasticity Emulation in a Freestanding Oxide-Based Neuromorphic Transistor with Dual In-Plane Gates

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics

Selective Release of Excitatory‐Inhibitory Neurotransmitters Emulated by Unipolar Synaptic Transistors via Gate Voltage Amplitude Modulation

Oxide-Based Synaptic Transistors Gated by Sol-Gel Silica Electrolytes

Synapse transistors based on Li7La3Zr2O12 (LLZO)nanofibers/ polyvinyl alcohol (PVA) composite gate dielectric for neuromorphic application