Abstract:Neuromorphic computing systems have shown powerful capability in tasks, such as recognition, learning, classification and decision-making, which are both challenging and inefficient in using the traditional computation architecture. The key elements including synapses and neurons, and their feasible hardware implementation are essential for practical neuromorphic computing. However, most existing synaptic devices used to emulate functions of a single synapse and the synapse-based networks are more energy intensive and less sustainable than their biological counterparts. The dendritic functions such as integration of spatiotemporal signals and spike-frequency coding characteristics have not been well implemented in a single synaptic device and thus play an imperative role in future practical hardware-based spiking neural networks. Moreover, most emerging synaptic transistors are fabricated by nanofabrication processes without CMOS compatibility for further wafer-scale integration. Herein, we demonstrate a novel ionic-gated silicon nanowire synaptic field-effect transistor (IGNWFET) with low power consumption (<400 fJ per switching event) based on the standard CMOS process platform. For the first time, the dendritic integration and dual-synaptic dendritic computations (such as "Add" and "Subtraction") could be realized by processing frequency coded spikes using a single device. Meanwhile, multi-functional characteristics of artificial synapses including the short-term and long-term synaptic plasticity, paired pulse facilitation and high-pass filtering were also successfully demonstrated based on 40 nm wide IGNWFETs. The migration of ions in polymer electrolyte and trapping in high-k dielectric were also experimentally studied in-depth to understand the short-term plasticity and long-term plasticity. Combined with statistical uniformity across a 4-inch wafer, the comprehensive performance of IGNWFET demonstrates its potential application in future biologically emulated neuromorphic systems.

Analog Synapses Based on Nonvolatile FETs With Amorphous ZrO 2 Dielectric for Spiking Neural Network Applications

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Artificial Neurosynaptic Device Based on Amorphous Oxides for Artificial Neural Network Constructing

Artificial synapses based on boron ions-modulated transistors for neuromorphic applications

High‐Performance Neuromorphic Computing Based on Ferroelectric Synapses with Excellent Conductance Linearity and Symmetry

Dual-input Optoelectronic Synaptic Transistor Based on Amorphous ZnAlSnO for Multi-Target Neuromorphic Simulation

Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing.

Ultra-low Power Hf0.5Zr0.5O2 Based Ferroelectric Tunnel Junction Synapses for Hardware Neural Network Applications

Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications

Electret/High-<i>k</i> Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Multi-terminal Ionic-Gated Low-Power Silicon Nanowire Synaptic Transistors with Dendritic Functions for Neuromorphic Systems.

Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

HfZrOx-based Capacitive Synapses with Highly Linear and Symmetric Multilevel Characteristics for Neuromorphic Computing

Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing

Oxide-Based Synaptic Transistors for Neuromorphic Systems

Long-Term Synaptic Plasticity Emulated in Modified Graphene Oxide Electrolyte Gated IZO-Based Thin-Film Transistors.

Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing

Oxygen Vacancy-Induced Synaptic Plasticity in InAlZnO Nanofiber Transistors for Low-Power Neuromorphic Electronics

A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0.5Zr0.5O2 films with uniform polarization and high Curie temperature

Inorganic Proton Conducting Electrolyte Coupled Oxide-Based Dendritic Transistors for Synaptic Electronics

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights