Abstract:Electronic synaptic devices are important building blocks for neuromorphic computational systems that can go beyond the constraints of von Neumann architecture. Although two‐terminal memristive devices are demonstrated to be possible candidates, they suffer from several shortcomings related to the filament formation mechanism including nonlinear switching, write noise, and high device conductance, all of which limit the accuracy and energy efficiency. Electrochemical three‐terminal transistors, in which the channel conductance can be tuned without filament formation provide an alternative platform for synaptic electronics. Here, an all‐solid‐state electrochemical transistor made with Li ion–based solid dielectric and 2D α‐phase molybdenum oxide (α‐MoO3) nanosheets as the channel is demonstrated. These devices achieve nonvolatile conductance modulation in an ultralow conductance regime (<75 nS) by reversible intercalation of Li ions into the α‐MoO3 lattice. Based on this operating mechanism, the essential functionalities of synapses, such as short‐ and long‐term synaptic plasticity and bidirectional near‐linear analog weight update are demonstrated. Simulations using the handwritten digit data sets demonstrate high recognition accuracy (94.1%) of the synaptic transistor arrays. These results provide an insight into the application of 2D oxides for large‐scale, energy‐efficient neuromorphic computing networks. All‐solid‐state synaptic transistors based on 2D α‐MoO3 nanosheets are fabricated. The operation mechanism is based on the gate voltage–induced reversible intercalation of Li‐ion dopants into α‐MoO3 channel lattice, which engenders bidirectional, near‐linear analog modulation of channel conductance in an ultralow conductance regime (<75 nS). The essential functionalities of synapses and neuromorphic computing for image recognition are demonstrated.

Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Electret/High-<i>k</i> Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Tunable Linearity of Weight Update in Low Voltage Synaptic Transistors with Periodic High‐k Laminates

Artificial Synapses Based on Lead-Free Perovskite Floating-Gate Organic Field-Effect Transistors for Supervised and Unsupervised Learning

Organic synaptic devices based on ionic gel with reduced leakage current

High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing

Microfluidic Shearing Regulated in Spin-Coated Dielectrics for Ultra-Low Voltage and High-Performance Synaptic Transistors

Ultralow-power optoelectronic synaptic transistors based on polyzwitterion dielectrics for in-sensor reservoir computing

Aqueous-solution-processed Proton-Conducting Carbon Nitride/polyvinylpyrrolidone Composite Electrolytes for Low-Power Synaptic Transistors with Learning and Memory Functions

Flexible and Energy-Efficient Synaptic Transistor with Quasi-Linear Weight Update Protocol by Inkjet Printing of Orientated Polar-Electret/High-k Oxide Composite Dielectric.

All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing

Low-Voltage Synaptic Transistors Based on PrO$_{\textit{x}}$/ZrO$_{\text{2}}$ Bilayer Dielectric for Neuromorphic Computing

Realization of Tunable Artificial Synapse Through Ambipolar Charge Trapping in Organic Transistor with Pentacene/poly(α-Methylstyrene) Architecture

InGaZnO Synaptic Transistor Using Metal-Hydroxyl Traps at Back Channel for Weight Modulation

Flexible Organic Electrochemical Transistors for Energy-Efficient Neuromorphic Computing

Design of 3-D Interface in Synaptic Transistors With Attojoule Power by Electrospinning Aligned Nanofibers for Neuromorphic Computing

Synapse transistors based on Li7La3Zr2O12 (LLZO)nanofibers/ polyvinyl alcohol (PVA) composite gate dielectric for neuromorphic application

Electrospun Nanofiber‐Based Synaptic Transistor with Tunable Plasticity for Neuromorphic Computing

Monolayer Molecular Crystals for Low-Energy Consumption Optical Synaptic Transistors

Analog Synapses Based on Nonvolatile FETs with Amorphous ZrO2 Dielectric for Spiking Neural Network Applications

A van der Waals Synaptic Transistor Based on Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> and 2D Tungsten Disulfide