Abstract:Two-dimensional (2D) materials based artificial synapses are important building blocks for the brain-inspired computing systems that are promising in handling large amounts of informational data with high energy-efficiency in the future. However, 2D devices usually rely on deposited or transferred insulators as the dielectric layer, resulting in various challenges in device compatibility and fabrication complexity. Here, we demonstrate a controllable and reliable oxidation process to turn 2D semiconductor HfS2 into native oxide, HfOx, which shows good insulating property and clean interface with HfS2. We then incorporate the HfOx/HfS2 heterostructure into a flash memory device, achieving a high on/off current ratio of ∼105, a large memory window over 60 V, good endurance, and a long retention time over 103 seconds. In particular, the memory device can work as an artificial synapse to emulate basic synaptic functions and feature good linearity and symmetry in conductance change during long-term potentiation/depression processes. A simulated artificial neural network based on our synaptic device achieves a high accuracy of ∼88% in MNIST pattern recognition. Our work provides a simple and effective approach for integrating high-k dielectrics into 2D material-based memory and synaptic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c22561?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c22561</a>.Figure S1, Raman spectra of the as-exfoliated HfS2 flake and the flake with 15-minute oxidation; Figure S2, cross-sectional STEM-HAADF image and EDX mapping of the HfS2/HfOx/WSe2 structure; Figure S3, schematic illustration of the fabrication process of the flash memory device; Figure S4, transfer curves of 5 devices with identical configuration; Figure S5, transfer curves of devices with different thicknesses of HfOx; Figure S6, transfer curves of FET devices with different configurations; Figure S7, graphical representation of rectangular voltage pulses; Figure S8, LTP/D curves; Figure S9, simulated circuit and schematic of a neuronal node in the neural network; Table S1, comparison of the nonlinearity of LTP and the LTD of our device and those in a previous work; and additional references (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c22561/suppl_file/am0c22561_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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