Oxide-Based Synaptic Transistors Gated by Sol-Gel Silica Electrolytes

Feng Shao,Yi Yang,Li Qiang Zhu,Ping Feng,Qing Wan
DOI: https://doi.org/10.1021/acsami.5b10195
IF: 9.5
2016-01-01
ACS Applied Materials & Interfaces
Abstract:Low-temperature sol-gel processed silica electrolyte films showed a high specific capacitance of 3.0 μF/cm(2) due to the electric-double-layer (EDL) effect. Oxide-based transistors gated by such silica electrolyte films show a high on/off ratio (>10(7)) and a very low operation voltage (<2.0 V). The proton-related dynamic modulation in these devices makes them ideal candidates for biological synapse emulation. Short-term synaptic plasticity, such as paired pulse facilitation, was successfully emulated. Most importantly, spiking and logic operation were also demonstrated when two lateral in-plane gates were used as the presynaptic inputs. Our oxide-based EDL transistors gated by sol-gel processed silica electrolyte films provide an interesting approach for synaptic behavior emulation, which is interesting for brain-inspired neuromorphic systems.
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