Abstract:Abstract The Ge 2 Sb 2 Te 5 alloy has served as the core material in phase-change memories with high switching speed and persistent storage capability at room temperature. However widely used, this composition is not suitable for embedded memories—for example, for automotive applications, which require very high working temperatures above 300 °C. Ge–Sb–Te alloys with higher Ge content, most prominently Ge 2 Sb 1 Te 2 (‘212’), have been studied as suitable alternatives, but their atomic structures and structure–property relationships have remained widely unexplored. Here, we report comprehensive first-principles simulations that give insight into those emerging materials, located on the compositional tie-line between Ge 2 Sb 1 Te 2 and elemental Ge, allowing for a direct comparison with the established Ge 2 Sb 2 Te 5 material. Electronic-structure computations and smooth overlap of atomic positions (SOAP) similarity analyses explain the role of excess Ge content in the amorphous phases. Together with energetic analyses, a compositional threshold is identified for the viability of a homogeneous amorphous phase (‘zero bit’), which is required for memory applications. Based on the acquired knowledge at the atomic scale, we provide a materials design strategy for high-performance embedded phase-change memories with balanced speed and stability, as well as potentially good cycling capability.

Phase Dependence of Schottky Barrier Heights for Ge–Sb–Te and Related Phase-Change Materials

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

Characteristics of Ga–Sb–Te Films for Phase-Change Memory

Bonding Nature and Optical Contrast of TiTe_2/Sb_2Te_3 Phase-Change Heterostructure

Strong Electron-Polarized Atom Chain in Amorphous Phase-Change Memory GeSbTe Alloy

Exploring Charge Transfer and Schottky Barrier Modulation at Monolayer Ge 2 Sb 2 Te 5 -Metal Interfaces

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Ab initio molecular dynamics and materials design for embedded phase-change memory

Drift of Schottky Barrier Height in Phase Change Materials

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Synthesis and characterization of phase change memory cells

Exploring charge transfer and schottky barrier modulation at monolayer Ge2Sb2Te5-metal interfaces

Study of Er-Sb and Er-Te parental alloys used in phase change memory

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Characteristics of Si-Sb-Te Films for Phase Change Memory

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Unraveling the optical contrast in Sb2Te and AgInSbTe phase-change materials

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Doping effects of Ru on Sb2Te and Sb2Te3 as phase change materials studied by first-principles calculations