Abstract:In the modeling of the reaction-transport process in GaN MOVPE growth, the selections of kinetic parameters (activation energy Ea and pre-exponential factor A) for gas reactions are quite uncertain, which cause uncertainties in both gas reaction path and growth rate. In this study, numerical modeling of the reaction-transport process for GaN MOVPE growth in a vertical rotating disk reactor is conducted with varying kinetic parameters for main reaction paths. By comparisons of the molar concentrations of major Ga-containing species and the growth rates, the effects of kinetic parameters on gas reaction paths are determined. The results show that, depending on the values of the kinetic parameters, the gas reaction path may be dominated either by adduct/amide formation path, or by TMG pyrolysis path, or by both. Although the reaction path varies with different kinetic parameters, the predicted growth rates change only slightly because the total transport rate of Ga-containing species to the substrate changes slightly with reaction paths. This explains why previous authors using different chemical models predicted growth rates close to the experiment values. By varying the pre-exponential factor for the amide trimerization, it is found that the more trimers are formed, the lower the growth rates are than the experimental value, which indicates that trimers are poor growth precursors, because of thermal diffusion effect caused by high temperature gradient. The effective order for the contribution of major species to growth rate is found as: pyrolysis species>amides>trimers. The study also shows that radical reactions have little effect on gas reaction path because of the generation and depletion of H radicals in the chain reactions when NH2 is considered as the end species.

Effect of Growth Parameters on GaN in a Vertical MOCVD Reactor

Effect of reactor geometry on GaN in a vertical MOCVD reactor

Influence of Species Transport and Inlet Condition on the MOCVD-Grown GaN Uniformity

Species Transport and Chemical Reaction in a MOCVD Reactor and Their Influence on the GaN Growth Uniformity

Simulation and Analysis of Flow Field in Nitride MOCVD Reactor Chamber

The Effect of Substrate Temperature on Chemical Reactions During Gan Growth in A Vertical Mocvd

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Simulation of growing GaN in vertical HVPE reactor

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Influencing factors of GaN growth uniformity through orthogonal test analysis

Effect of Reactor Pressure on the Growth Rate and Structural Properties of GaN Films

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

Effects of Thermal Convection on Growth Rate of GaN by MOVPE

P‐7.3: Numerical Modeling of GaN Growth by MOCVD on Metal Substrate

A Novel MOCVD Reactor for Growth of High-Quality GaN-related LED Layers

MOCVD Process Numerical Simulation of GaN and Geometrical Optimization of the Showerhead Reactor

Influence of Growth Pressure of A Gan Buffer Layer on the Properties of Mocvd Gan

Numerical Study And Optimization Of Gan Thin-Film Growth By Mocvd Method

Effects of Reaction-Kinetic Parameters on Modeling Reaction Pathways in GaN MOVPE Growth

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth