Abstract:It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

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Optimization of approach for metal contamination reduction

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Application of Ultraviolet Fluorescence in Wafer Surface Cleaning Analysis

Numerical and experimental investigation on iron contamination of 200 mm semiconductor-grade CZ-Si by bubble-free layer of quartz crucible

Two-peak Characteristic Distribution of Iron Impurities at the Bottom of Cast Quasi-Single-crystalline Silicon Ingot

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Preparation of an Electrochemical Sensor for Measuring the Silicon Content in Molten Iron

Influence of Iron, Aluminum, Calcium, Titanium and Vanadium Impurities Removal from Silicon Based on Cu-catalyzed Chemical Leaching

Trace metal contamination analysis of wafer edge and bevel by automated VPD ICP-MS: CFM: Contamination free manufacturing

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Optimization of Si wafer chemical cleaning process

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Migration Behavior of Impurity Iron in Silicon Melt Under Pulsed Electric Current