Abstract:Single-crystal SiC has been widely applied for electronic devices. Photocatalysis assisted chemical mechanical polishing (PCMP) is an efficient global flattening technology for finishing SiC, but the atomic level removal mechanism is still under discussion. In this paper, the atomic behavior of removal with hydroxyl free radical (∙OH) aqueous solution was investigated using the ReaxFF molecular dynamics (MD) simulation. The theoretical analysis shows that ∙OH oxidation of SiC can occur spontaneously, and the mechanical behavior would be able to increase the potential energy and reduce the reaction barrier the reactants. The simulation results show that with only chemical oxidation occurs, the SiC surface adsorbed O, H or -OH to produce Si-O*H2, Si-OH2, Si-OH, Si-H2O, Si-H*O*-H2O, Si-H2O*, Si-O*H* and Si-H, etc., no Si atoms were observed to detach from the SiC substrate. Nevertheless, if the mechanical action was applied, some Si and C atoms break off the substrate by forming SiO, SiO2, CO, CO2 or chain, and the other Si or C atoms were detached by the adsorption on the abrasive. In addition, no atoms break away from the substrate in H2O solution. The force Fx in H2O solution is less than that in ∙OH aqueous solution because of the lubrication of H2O solution. Furthermore, it is found that the mechanical action applied, the more -H and -O adsorbed on the SiC surface result in the more Si and C atoms are removed. The experimental results show that SiC wafer could be oxidized by ∙OH under the mechanical action of diamond abrasive particles. This study reveals that the removal of Si and C atoms from the substrate is the result of the combined action of chemical oxidation and mechanical sliding, which is helpful to explain the dynamic process of the oxidation and removal of Si and C atoms on the atomic level in the SiC PCMP. Furthermore, it provides a valuable method reveal the material removal mechanism.

Optimization of Si wafer chemical cleaning process

Chemical Cleaning of Silicon Wafer Surface

Atomic-scale Study on Particle Movement Mechanism During Silicon Substrate Cleaning Using ReaxFF MD

A Pre-Oxidation Cleaning Process to Decrease the Microroughess of Si Wafer Surfaces

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Towards Investigating Surface Quality of Single-Crystal Silicon Optics Polished with Different Processes

Mechanism Analysis of Megasonic and Brush Cleaning Processes for Silicon Substrate after Chemical Mechanical Polishing

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Study on the Surface Morphology of Micro-Particles and the Oxide Layer on Silicon Carbide Crystal Using Nanosecond Green Laser Cleaning Assisted with Airflow

Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing

The Evolution of Silicon Wafer Cleaning Technology

High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Atomistic removal mechanisms of nano polishing single-crystal SiC in hydroxyl free radical aqueous solution

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

Effect of cations on the improvement of material removal rate of silicon wafer in chemical mechanical polishing

Investigation on Electrical Enhanced Photocatalysis Polishing of Single-Crystal Silicon Carbide Substrates

Effect of Silicon Wafer Surface Stains on Copper-Assisted Chemical Etching

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Achievement of a near-perfect smooth silicon surface