Abstract:Single-crystal SiC has been widely applied for electronic devices. Photocatalysis assisted chemical mechanical polishing (PCMP) is an efficient global flattening technology for finishing SiC, but the atomic level removal mechanism is still under discussion. In this paper, the atomic behavior of removal with hydroxyl free radical (∙OH) aqueous solution was investigated using the ReaxFF molecular dynamics (MD) simulation. The theoretical analysis shows that ∙OH oxidation of SiC can occur spontaneously, and the mechanical behavior would be able to increase the potential energy and reduce the reaction barrier the reactants. The simulation results show that with only chemical oxidation occurs, the SiC surface adsorbed O, H or -OH to produce Si-O*H2, Si-OH2, Si-OH, Si-H2O, Si-H*O*-H2O, Si-H2O*, Si-O*H* and Si-H, etc., no Si atoms were observed to detach from the SiC substrate. Nevertheless, if the mechanical action was applied, some Si and C atoms break off the substrate by forming SiO, SiO2, CO, CO2 or chain, and the other Si or C atoms were detached by the adsorption on the abrasive. In addition, no atoms break away from the substrate in H2O solution. The force Fx in H2O solution is less than that in ∙OH aqueous solution because of the lubrication of H2O solution. Furthermore, it is found that the mechanical action applied, the more -H and -O adsorbed on the SiC surface result in the more Si and C atoms are removed. The experimental results show that SiC wafer could be oxidized by ∙OH under the mechanical action of diamond abrasive particles. This study reveals that the removal of Si and C atoms from the substrate is the result of the combined action of chemical oxidation and mechanical sliding, which is helpful to explain the dynamic process of the oxidation and removal of Si and C atoms on the atomic level in the SiC PCMP. Furthermore, it provides a valuable method reveal the material removal mechanism.

A Pre-Oxidation Cleaning Process to Decrease the Microroughess of Si Wafer Surfaces

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Chemical Cleaning of Silicon Wafer Surface

Atomic-scale Study on Particle Movement Mechanism During Silicon Substrate Cleaning Using ReaxFF MD

Optimization of Si wafer chemical cleaning process

Preoxidation UV Treatment of Silicon Wafers

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Atomistic Mechanisms of Si Chemical Mechanical Polishing in Aqueous H2O2: ReaxFF Reactive Molecular Dynamics Simulations

Simulation of Chemical Reactions with Methanol and Oxalic Acid on 4H-Sic Surfaces Before and after Nanoabrasion

Gaas Surface Wet Cleaning by A Novel Treatment in Revolving Ultrasonic Atomization Solution

Tuning the Surface Characteristic of Al-Si Alloys and Its Impacts on the Formation of Micro Arc Oxidation Layers

Oxidation Of Silicon Surface With Atomic Oxygen Radical Anions

Achievement of a near-perfect smooth silicon surface

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

Effect of cations on the improvement of material removal rate of silicon wafer in chemical mechanical polishing

Study of anisotropic etching of (1 0 0) Si with ultrasonic agitation

Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions

Atomistic removal mechanisms of nano polishing single-crystal SiC in hydroxyl free radical aqueous solution

RCA Clean Replacement

Progress and Mechanism of Cu Assisted Chemical Etching of Silicon in A Low Cu2+ Concentration Region