Abstract:Understanding the properties that determine the distribution and behavior of trace impurities in Si wafers is critical to defining and controlling the performance, reliability, and yields of integrated microelectronic devices. It remains, however, an intrinsically difficult task to determine trace impurities in Si because of the minute concentrations and extremely high levels of matrix involved. In this study, we used an electrodialyzer for the simultaneous on-line removal of the silicate and acid matrices through the neutralization of the excessive hydrogen ion and selectively separation of acid and silicate ions by the combination of electrode reaction as a source of hydroxide ions with the anion exchange membrane separation. To retain the analyte ions in the sample stream, we found that the presence of moderate amounts of nitric acid and hydrazine were necessary to improve the retention efficiency, not only for Zn(2+), Ni(2+), Cu(2+), and Co(2+) ions but also for CrO(4)(2-) ion. Under the optimized conditions, the interference that resulted from the sample matrix was suppressed significantly to provide satisfactory analytical signals. The precision of this method was ca. 5% when we used an electrodialyzer equipped with an anion exchange membrane to remove the sample matrix prior to performing inductively coupled plasma mass spectrometry (ICP-MS); the good agreement between the data obtained using our proposed method and those obtained using a batchwise wet chemical technique confirmed its accuracy. Our method permits the determination of Zn, Ni, Cu, Co, and Cr in Si wafers at detection limits within the range from 2.2 x 10(15) to 9.0 x 10(15) atoms cm(-3).

Trace metal contamination analysis of wafer edge and bevel by automated VPD ICP-MS: CFM: Contamination free manufacturing

Trace Metallic Contamination Analysis on Wafer Edge and Bevel by TXRF and VPD-TXRF

Optimization of approach for metal contamination reduction

On-Line Metal Concentration Measurement at an Ultra-Trace Level in DIW by Solid Phase Extraction Method Coupled with ICP-MS

Wafer Edge Process Integration and Defect Inspection with the Immersion Lithography Process

Eliminating arsenic containing residue that create killer defects in 20 nm HVM

Elimination of suction effect in interfacing microchip electrophoresis with inductively coupled plasma mass spectrometry using porous monolithic plugs.

Coupling of an electrodialyzer with inductively coupled plasma mass spectrometry for the on-line determination of trace impurities in silicon wafers after surface metal extraction

(Digital Presentation) Uniformity and Profile Improvement of Fin Etching Process at Wafer Extreme Edge for Finfet Mass Production

An Investigation of Edge Bead Removal Width Variability, Effects and Process Control in Photolithographic Manufacturing

Top Metal Layer Electro Plating Edge Bevel Removal Improvement Study

Internal Gettering of Copper Contamination in Czochralski Silicon

Application of Ultraviolet Fluorescence in Wafer Surface Cleaning Analysis

Edge Effects of an Eddy-Current Thickness Sensor During Chemical Mechanical Polishing

Study of Plug Etch back process matching on faraday shielded ICP and traditional CCP plasma ETCH chambers

Metal hard-mask based AIO etch challenges and solutions

A Method for Measuring Resistance of Metal Interconnection Inside Chip

EFFECT OF WAFER EDGE CUT ON TESTING AND YIELD

Point-of-Use Sampling and Metal Analysis for Trichlorosilane

Wafer level microarcing model in 90nm chemical-vapor deposition low-k via etch on 300mm silicon-on-insulator substrate

Root Cause Analysis and Correction of Single Metal Contact Open-Induced Scan Chain Failure in 90nm node VLSI