Point-of-Use Sampling and Metal Analysis for Trichlorosilane

D. Bollinger,D. Cowles
Abstract:Highly reactive gases, such as trichlorosilane and hydrogen chloride, are crucial reagents in many semiconductor fabrication processes. The continuing challenge in delivering such gases to the point-of-use is to avoid contamination of the gases by metallic corrosion byproducts from tubing and components. Gas line corrosion results from intrusion of air or moisture due to leaks, cylinder change-outs, purifier exhaustion, or human error. When metal contamination is detected at the wafer, reactive gas delivery lines, along with the source cylinder, are often the first suspects in the investigation. Typical responses to metal contamination events include source cylinder replacement, change-out of expensive components or even whole sections of the gas delivery hardware, as well as timeconsuming test wafer production and analysis. What is lacking is a flexible, safe method for reactive gas sample collection that can be used to isolate the contamination source in a distribution system. This paper describes a point-of-use (POU) sampling/offsite analysis method for quantification of metal impurities in trichlorosilane (TCS). The sampling method described here is based on hydrolysis of TCS in aqueous HF. Analysis of metal impurities in the hydrolysis solution is achieved by inductively-coupled plasma mass-spectroscopy (ICP-MS). Presented are results of laboratory sampling method development tests. Method detection limits are compared against typical TCS purity specifications. In addition, TCS hydrolysis chemistry is explained along with its impact on quantitative data analysis.
Chemistry,Engineering,Materials Science
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