Preparation and microstructure characterization of self-scattered SiNWs powders

Xia ZHANG,Shaoping CHEN,Wenhao FAN,Yankun WANG,Qingsen MENG
DOI: https://doi.org/10.3969/j.issn.1001-9731.2015.19.027
2015-01-01
Abstract:Silicon and Ni(NO 3 )2 .6 H 2 O were used as raw materials to prepare nickel coated silicon powder,and then “self-scattered”silicon nano wires (SiNWs)were formed by interface eutectic reaction between silicon and nickel.The “self-scattered”SiNWs can be easily mixed with different materials to form composites without twi-ning and agglomeration which are typical problems of traditional nanowires.It’s indicated that both molar ratio of Si to Ni and silicon particle size have important influence on growth kinetics of SiNWs including the coating appearance and quantity of SiNWs.When the particle size of silicon was 74 μm,80% of the mixture grew into linear SiNWs through annealing at 950 ℃ for 120 min with a molar ratio of n (Si)∶n (Ni)=2∶1.When the sili-con was further ball milled into nano particles (around 100 nm),the Si-centered self-scattered SiNWs growing in radial were formed and each single SiNWs was about 150 nm in diameter and 1.5 μm in length.
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