Abstract:Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size leading to ultrahigh-resonance frequencies and extreme surface-to-volume ratios, silicon NWs raise new opportunities regarding sensitivity, precision, and speed in both physical and biochemical sensing. With silicon optoelectromechanical properties strongly dependent on the level of NW intrinsic stress, various studies have been devoted to the measurement of such stresses generated, for example, as a result of harsh fabrication processes. However, due to enormous NW surface area, even the native oxide that is conventionally considered as a benign surface condition can cause significant stresses. To address this issue, a combination of nanomechanical characterization and atomistic simulation approaches is developed. Relying only on low-temperature processes, the fabrication approach yields monolithic NWs with optimum boundary conditions, where NWs and support architecture are etched within the same silicon crystal. Resulting NWs are characterized by transmission electron microscopy and micro-Raman spectroscopy. The interpretation of results is carried out through molecular dynamics simulations with ReaxFF potential facilitating the incorporation of humidity and temperature, thereby providing a close replica of the actual oxidation environment-in contrast to previous dry oxidation or self-limiting thermal oxidation studies. As a result, consensus on significant intrinsic tensile stresses on the order of 100 MPa to 1 GPa was achieved as a function of NW critical dimension and aspect ratio. The understanding developed herein regarding the role of native oxide played in the generation of NW intrinsic stresses is important for the design and development of silicon-based NEMS.

Research of Mechanism of Buried Oxide Layer Stress Impact on the Micro-cantilever Processing Breakage

Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Engineering Strain in Silicon Using SIMOX 3-D Sculpting

Stress calculation and analysis of uniaxially strained silicon on the insulator

Pattern Buried Oxide in Silicon-on-insulator-based Fabrication of Floppy Single-Crystal-silicon Cantilevers

Fabrication of a Novel Device by Release the Stress in a Reliable Way

Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers

Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Three Dimensional Modeling of Anisotropic Stress Effects in Thermal Oxidation of Silicon

Study on stress in trench structures during silicon IGBTs process-oxidation

Real-time Stress Detection of Monocrystalline Silicon by Laser Irradiation Using Mach–Zehnder Interferometry

Generation and distribution of residual stress during nano-grinding of monocrystalline silicon

Design and Verification of a Structure for Isolating Packaging Stress in SOI MEMS Devices

Fracture Mechanics Analysis on Smart-Cut ® Technology. Part 1: Effects of Stiffening Wafer and Defect Interaction

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Fabrication and Characterization of Uniaxially Strained SOI with Wafer Level by Mechanical Bending and Annealing

Modeling of Stress-Retarded Thermal Oxidation of Nonplanar Silicon Structures for Realization of Nanoscale Devices

Characterization and Analysis of Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer

The Method of Prevent Footing Effect in Making SOI Micro-Mechanical Structure

Simulation of Thermal Stress in SiO2 Thin Film