Abstract:The semiconductor industry is undergoing a transformative phase, marked by the relentless drive for miniaturization and a constant demand for higher performance and energy efficiency. However, the reduction of metal–oxide–semiconductor field-effect transistor sizes for advanced technology nodes below 10 nm presents several challenges. In response, strained silicon technology has emerged as a key player, exploiting strain induction in the silicon crystal lattice to improve device performance. At the same time, there has been a growing need for characterization techniques that allow in-line monitoring of sample conditions during semiconductor manufacturing, as an alternative to traditional methods such as transmission electron microscopy or high-resolution X-ray diffraction, which have several limitations in terms of measurement time and sample destructiveness. This paper explores the application of advanced spectroscopic characterization techniques, in particular μ-Raman spectroscopy and tip-enhanced Raman spectroscopy (TERS), to meet the evolving needs of the semiconductor industry for quality control and failure analysis, increasingly requiring faster and non-destructive characterization techniques. μ-Raman provides insight into strain values and distributions of strained layers with different thicknesses and germanium concentrations, but its lateral resolution is constrained by the Abbe diffraction limit. TERS, on the other hand, emerges as a powerful non-destructive technique capable of overcoming diffraction limits by exploiting the combination of an atomic force microscope with a Raman spectrometer. This breakthrough makes it possible to estimate the chemical composition and induced strain in the lattice by evaluating the Raman peak position shifts in strained and unstrained silicon layers, providing crucial insights for nanoscale strain control. In particular, this paper focuses on the TERS characterization of Si 0.7 Ge 0.3 epitaxial layers grown on a silicon-on-insulator device, demonstrating the effectiveness of this technique and the high lateral resolution that can be achieved.

Engineering Strain in Silicon Using SIMOX 3-D Sculpting

The Formation Mechanism of Globally Biaxial Strain in He+ Implanted Silicon-on-insulator Wafer Based on the Plastic Deformation and Smooth Sliding of Buried SiO2 Film

Analyzing strained-silicon options for stress-engineering transistors

Process Characterization for Strained Si on SOI CMOS Devices

Direct Fabrication Of Silicon Photonic Devices On A Flexible Platform And Its Application For Strain Sensing

Three Dimensional Modeling of Anisotropic Stress Effects in Thermal Oxidation of Silicon

Complementary Metal Oxide Silicon Integrated Circuits Incorporating Monolithically Integrated Stretchable Wavy Interconnects

Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Strain engineering of the electronic states of silicon-based quantum emitters

Research of Mechanism of Buried Oxide Layer Stress Impact on the Micro-cantilever Processing Breakage

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Strain relaxation in patterned strained silicon directly on insulator structures

Strain redistribution in free-standing bridge structure released from strained silicon-on-insulator

Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

Fabrication and Characterization of Uniaxially Strained SOI with Wafer Level by Mechanical Bending and Annealing

Three Dimensionial Surface Modelling: A Novel Analysis Technique for Non-Destructive X-Ray Diffraction Imaging of Semiconductor Die Warpage & Strain in Fully Encapsulated Integrated Circuits

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

Strained Silicon Technology: Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Quantitative Nanoscale Local Strain Profiling in Embedded Sige Metal-Oxide-Semiconductor Structures

A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS