Abstract:In this paper, we proposed an approach to obtain a globally biaxially strained silicon-on-insulator (SOI) wafer, and the strain mechanism was discussed. By this process, both biaxially tensile and compressive strained SOI (sSOI) can be obtained. The strain introduced into the SOI layer is mainly contributed by the plastic deformation of the buried SiO2 film caused by annealing with the deposition of a high-stress SiN film. Furthermore, He+ implantation at the interface between SiO2 and the substrate Si layer is confirmed to effectively enhance the strain by the sliding of the buried SiO2 at the SiO2-substrate Si interface. Raman spectroscopy shows that the strain of the He+ implanted sSOI has a significant enhancement of more than 300% compared with the unimplanted sSOI.In this paper, we proposed an approach to obtain a globally biaxially strained silicon-on-insulator (SOI) wafer, and the strain mechanism was discussed. By this process, both biaxially tensile and compressive strained SOI (sSOI) can be obtained. The strain introduced into the SOI layer is mainly contributed by the plastic deformation of the buried SiO2 film caused by annealing with the deposition of a high-stress SiN film. Furthermore, He+ implantation at the interface between SiO2 and the substrate Si layer is confirmed to effectively enhance the strain by the sliding of the buried SiO2 at the SiO2-substrate Si interface. Raman spectroscopy shows that the strain of the He+ implanted sSOI has a significant enhancement of more than 300% compared with the unimplanted sSOI.

The Formation Mechanism of Globally Biaxial Strain in He+ Implanted Silicon-on-insulator Wafer Based on the Plastic Deformation and Smooth Sliding of Buried SiO2 Film

Fabrication and Characterization of Uniaxially Strained SOI with Wafer Level by Mechanical Bending and Annealing

Uniaxially Strained Silicon on Insulator with Wafer Level Prepared by Mechanical Bending and Annealing

Fabrication of the Uniaxial Stained SOI Wafer by Mechanical Bending

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Strain relaxation in patterned strained silicon directly on insulator structures

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Stress calculation and analysis of uniaxially strained silicon on the insulator

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Process Characterization for Strained Si on SOI CMOS Devices

Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Novel SOI technology - H+ implantation, bonding and separation

Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si 0.35 Ge 0.65 OI) Wafers using Cyclical Thermal Oxidation and Annealing

Conversion of strain state from biaxial to uniaxial in strained silicon

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity

Pillar-lattice-assisted stress-free silicon-on-insulator

A Study of Si Epitaxial Layer Growth on SOI Wafers Prepared by SIMOX

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Manipulation of Strain State in Silicon Nanoribbons by Top-Down Approach