Abstract:Recently, ultralarge (>10%) strain with fully reversible elastic deformation has been experimentally achieved in silicon nanowires [H. Zhang et al., Sci. Adv. 2, e1501382 (2016)]. With this breakthrough, here in this work, based on the first principles calculation, the structural and electric properties of silicon under ultralarge strain are comparatively investigated. Unlike previous theoretical/simulation investigations on silicon nanowires with only a few nanometers, bulk silicon models are employed here to provide more realistic and comparable results to our experimentally tested samples (∼100 nm diameter). Strong anisotropic effects are induced by loading strain along all different orientations. Simultaneously, the band structures evolution demonstrates electronic anisotropy with the loading strain on three orientations. Silicon keeps an indirect bandgap under increased strain along the ⟨100⟩ orientation while transforming to a direct bandgap with strain along ⟨110⟩ and ⟨111⟩ orientations. Furthermore, ultralarge strain on these two orientations would diminish the bandgap and result into metallization. These results provide insights into understanding “elastic strain engineering” of silicon nanowire applications and demonstrate the possibility of tuning the electronic and optical properties through pure mechanical straining of functional materials.

Fabrication of the Uniaxial Stained SOI Wafer by Mechanical Bending

Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Conversion of strain state from biaxial to uniaxial in strained silicon

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Manipulation of Strain State in Silicon Nanoribbons by Top-Down Approach

Effect of Different Oxide Thickness on the Bending Young'S Modulus of Sio2@Sic Nanowires

Strain redistribution in free-standing bridge structure released from strained silicon-on-insulator

Role of surface morphology in wafer bonding

Geometrical Deviation and Residual Strain in Novel Silicon-On-Aluminium-Nitride Bonded Wafers

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Novel SOI technology - H+ implantation, bonding and separation

Bending test and bonding mechanism analysis of the SiOx film on aluminum substrate

Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams

Non-uniaxial Stress-Assisted Fabrication of Nanoconstriction on Vertical Nanostructured Si.

An Extended Stoney's Formula Including Nonlinear Deformation for Large Size Wafer of Multilayers with Arbitrary Thicknesses

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Forward bending of silicon nanowires induced by strain distribution in asymmetric growth

Atomic mechanisms governing the elastic limit and the incipient plasticity of bending Si nanowires.

Improvement Of Thin Film Tensile Testing Technology Using Process Integrated Specimen And Considering Its Out-Of-Plane Deformation

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications